K4A8G085WC vs K4A8G085WB-BCPB Comparison
Detailed side-by-side comparison of K4A8G085WC by Samsung Electronics and K4A8G085WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC ✓ Active
Specification Comparison
| Parameter | K4A8G085WC | K4A8G085WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $4.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 8 Gbit | — |
| Organization | 1G x 8 | — |
| Speed | 2666 Mbps/pin (DDR4-2666) | — |
| Supply Voltage | 1.2 V | 1.2 V |
| Supply Voltage Range | 1.14 V to 1.26 V | — |
| Clock Frequency | 1333 MHz (1333.333 GHz nominal, per web data) | — |
| Operating Temperature (K4A8G085WC-BITD) | -40 C to +95 C | — |
| Operating Temperature (K4A8G085WC-BCTD) | 0 C to +95 C | — |
| Package | 78-ball FBGA (78FBGA) | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length |
| Mounting Type | Surface Mount | Surface Mount |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Data Mask (DM) | Yes | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Max Clock Frequency | — | 1066 MHz |
| Max Access Time | — | 0.18 ns |
| Max Standby Current | — | 0.016 mA |
| Refresh Cycles | — | 8192 |
| Technology | — | CMOS, 8Gb B-die |
| Number of Terminals | — | 78 |
| Operating Temperature | — | 0C to +85C |
| Interface | — | DDR4 SDRAM parallel interface |
| Operating Temperature Grade | — | Commercial (0C to 85C) |