K4A8G085WC vs K4A8G085WB-BCPB Comparison
Detailed side-by-side comparison of K4A8G085WC by Samsung Electronics and K4A8G085WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC β Active
Specification Comparison
| Parameter | K4A8G085WC | K4A8G085WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.90 | $3.28 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 |
| Speed | 2666 Mbps/pin (DDR4-2666) | β |
| Supply Voltage | 1.2 V | 1.2 V (nominal) |
| Supply Voltage Range | 1.14 V to 1.26 V | β |
| Clock Frequency | 1333 MHz (1333.333 GHz nominal, per web data) | β |
| Operating Temperature (K4A8G085WC-BITD) | -40 C to +95 C | β |
| Operating Temperature (K4A8G085WC-BCTD) | 0 C to +95 C | β |
| Package | 78-ball FBGA (78FBGA) | 78-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| CRC Function | Yes | β |
| ZQ Calibration | Yes | β |
| Dynamic On-Chip Termination (ODT) | Yes | β |
| Data Mask (DM) | Yes | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Data Rate | β | 3200 Mbps (PC4-25600) |
| Speed Grade | β | BC |
| CAS Latency (CL) | β | 22 |
| Burst Length | β | 8 |
| Bank Architecture | β | 16 banks (4 bank groups) |
| Refresh Interval | β | 7.8 us (up to 85C) |
| Interface Type | β | SSTL-12 |
| Termination | β | ODT / dynamic ODT |
| Self-Refresh | β | Temperature-Compensated Self-Refresh (TCSR) |
| Package Dimensions | β | 11 mm x 11 mm |
| Operating Mode | β | DLL enabled |