K6X0808C1D-BF70 vs K6X0808C1D-BF70T Vergleich
Detaillierter Direktvergleich von K6X0808C1D-BF70 von Samsung Electronics und K6X0808C1D-BF70T von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K6X0808C1D-BF70 | K6X0808C1D-BF70T |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Ende des Lebenszyklus | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,85 | $1,05 |
| Speichertyp | Asynchronous SRAM (CMOS) | SRAM - Asynchronous |
| Density | 256 Kbit | — |
| Speicherorganisation | 32K x 8 | — |
| Access Time | 70 ns | 70 ns |
| Schnittstelle | Parallel | — |
| Technology | CMOS | — |
| Gehäuse | 28-SOP (PDSO28) | 28-SOP |
| Montageart | Surface Mount | Surface Mount |
| Versorgungsspannung | [DATA_NEEDED: Supply Voltage] | — |
| Operating Current (active) | [DATA_NEEDED: Operating Current] | — |
| Standby Current (CMOS) | [DATA_NEEDED: Standby Current] | — |
| Betriebstemperatur | 0C to +70C (commercial grade, BF suffix) | -40C to +85C (TA) |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Data Retention | Volatile (battery-backup capable with CE control) | — |
| I/O Type | Tri-state, common I/O (DQ0-DQ7) | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | Compliant |
| Address Bus | A0-A14 (15 address lines) | — |
| Speichergröße | — | 256 Kbit |
| Memory Organization | — | 32K x 8 |
| Memory Interface | — | Parallel |
| Write Cycle Time - Word, Page | — | 70 ns |
| Voltage - Supply | — | 4.5 V to 5.5 V |
| Process Technology | — | CMOS |
| Address Bus Width | — | 15 bit (A0-A14) |
| Datenbusbreite | — | 8 bit (I/O0-I/O7) |
| I/O Compatibility | — | TTL compatible |
| Refresh Requirement | — | None (fully static operation) |