K6X0808C1D-BF70 vs K6X0808C1D-BF70T 对比
详细并排对比 K6X0808C1D-BF70 出自 Samsung Electronics 和 K6X0808C1D-BF70T 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K6X0808C1D-BF70 | K6X0808C1D-BF70T |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 停产 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.85 | $1.05 |
| 存储器类型 | Asynchronous SRAM (CMOS) | SRAM - Asynchronous |
| Density | 256 Kbit | — |
| 存储组织 | 32K x 8 | — |
| Access Time | 70 ns | 70 ns |
| 接口 | Parallel | — |
| Technology | CMOS | — |
| 封装 | 28-SOP (PDSO28) | 28-SOP |
| 安装类型 | Surface Mount | Surface Mount |
| 电源电压 | [DATA_NEEDED: Supply Voltage] | — |
| Operating Current (active) | [DATA_NEEDED: Operating Current] | — |
| Standby Current (CMOS) | [DATA_NEEDED: Standby Current] | — |
| 工作温度 | 0C to +70C (commercial grade, BF suffix) | -40C to +85C (TA) |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Data Retention | Volatile (battery-backup capable with CE control) | — |
| I/O Type | Tri-state, common I/O (DQ0-DQ7) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | Compliant |
| Address Bus | A0-A14 (15 address lines) | — |
| 存储容量 | — | 256 Kbit |
| Memory Organization | — | 32K x 8 |
| Memory Interface | — | Parallel |
| Write Cycle Time - Word, Page | — | 70 ns |
| Voltage - Supply | — | 4.5 V to 5.5 V |
| Process Technology | — | CMOS |
| Address Bus Width | — | 15 bit (A0-A14) |
| 数据总线宽度 | — | 8 bit (I/O0-I/O7) |
| I/O Compatibility | — | TTL compatible |
| Refresh Requirement | — | None (fully static operation) |