K6X0808C1D-BF70T vs K6X0808C1D-BF70 Vergleich
Detaillierter Direktvergleich von K6X0808C1D-BF70T von Samsung Electronics und K6X0808C1D-BF70 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K6X0808C1D-BF70T | K6X0808C1D-BF70 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Ende des Lebenszyklus |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $1,85 |
| Speichertyp | SRAM - Asynchronous | Asynchronous SRAM (CMOS) |
| Speichergröße | 256 Kbit | — |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| Betriebstemperatur | -40C to +85C (TA) | 0C to +70C (commercial grade, BF suffix) |
| Gehäuse | 28-SOP | 28-SOP (PDSO28) |
| Montageart | Surface Mount | Surface Mount |
| Process Technology | CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | — |
| Datenbusbreite | 8 bit (I/O0-I/O7) | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS Status] |
| Density | — | 256 Kbit |
| Speicherorganisation | — | 32K x 8 |
| Schnittstelle | — | Parallel |
| Technology | — | CMOS |
| Versorgungsspannung | — | [DATA_NEEDED: Supply Voltage] |
| Operating Current (active) | — | [DATA_NEEDED: Operating Current] |
| Standby Current (CMOS) | — | [DATA_NEEDED: Standby Current] |
| Data Retention | — | Volatile (battery-backup capable with CE control) |
| I/O Type | — | Tri-state, common I/O (DQ0-DQ7) |
| Address Bus | — | A0-A14 (15 address lines) |