K6X0808C1D-BF70T vs K6X0808C1D-BF70 对比
详细并排对比 K6X0808C1D-BF70T 出自 Samsung Electronics 和 K6X0808C1D-BF70 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K6X0808C1D-BF70T | K6X0808C1D-BF70 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $1.85 |
| 存储器类型 | SRAM - Asynchronous | Asynchronous SRAM (CMOS) |
| 存储容量 | 256 Kbit | — |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| 工作温度 | -40C to +85C (TA) | 0C to +70C (commercial grade, BF suffix) |
| 封装 | 28-SOP | 28-SOP (PDSO28) |
| 安装类型 | Surface Mount | Surface Mount |
| Process Technology | CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | — |
| 数据总线宽度 | 8 bit (I/O0-I/O7) | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS Status] |
| Density | — | 256 Kbit |
| 存储组织 | — | 32K x 8 |
| 接口 | — | Parallel |
| Technology | — | CMOS |
| 电源电压 | — | [DATA_NEEDED: Supply Voltage] |
| Operating Current (active) | — | [DATA_NEEDED: Operating Current] |
| Standby Current (CMOS) | — | [DATA_NEEDED: Standby Current] |
| Data Retention | — | Volatile (battery-backup capable with CE control) |
| I/O Type | — | Tri-state, common I/O (DQ0-DQ7) |
| Address Bus | — | A0-A14 (15 address lines) |