M29F800FB55M3E2 vs M29F800FT55N3E2 Vergleich
Detaillierter Direktvergleich von M29F800FB55M3E2 von Micron Technology und M29F800FT55N3E2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29F800FB55M3E2 | M29F800FT55N3E2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,01 | $4,98 |
| Speichertyp | Parallel NOR Flash | NOR Flash |
| Density | 8 Mbit (8389 kbits) | 8389 kbits |
| Speicherorganisation | 512K x 16 / 1M x 8 | — |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block | Bottom boot block | — |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Automotive Qualification | AEC-Q100 (Auto Grade 125C) | — |
| Gehäuse | 44-pin SO (SOP) | 48-TSOP I |
| Montageart | Surface Mount | Surface Mount |
| Program / Erase | Embedded byte/word program and erase controller | — |
| Number of Words | 512 k | — |
| Bits per Word | 16 bits | — |
| RoHS-Status | Compliant (E suffix, RoHS-compliant package) | Compliant (E suffix = lead-free/RoHS) |
| Standard Packing | Tray | — |
| Family | M29F 200/400/800 5V Parallel NOR Flash | — |
| Memory Organization | — | 512K x 16 (8 Mbit) |
| Versorgungsspannung | — | 5 V |
| Schnittstelle | — | Parallel |
| Boot Block Architecture | — | Top Boot Block |
| Word/Byte Configuration | — | BYTE# pin selectable (16-bit / 8-bit) |
| Hardware Reset / Power-Down | — | RP# pin |
| Embedded Program/Erase Controller | — | Yes (byte/word program, block erase) |
| Program/Erase Endurance | — | 100,000 cycles per block (typical for family) |
| Data Retention | — | >20 years (typical for family) |
| Ready/Busy Output | — | Yes |