MD7P19130HSR3 vs MD7P19130HR3 Vergleich

Detaillierter Direktvergleich von MD7P19130HSR3 von NXP Semiconductors und MD7P19130HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MD7P19130HSR3 MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 ✓ Aktiv
NXP Semiconductors
MD7P19130HR3 MD7P19130HR3 - 40W, 1990 MHz RF Power LDMOS | NXP

MD7P19130HR3 - 40W, 1990 MHz RF Power LDMOS | NXP

MD7P19130HR3 ✓ Aktiv

Spezifikationsvergleich

Parameter MD7P19130HSR3 MD7P19130HR3
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $65,10 $69,50
Transistortyp LDMOS (Dual), Lateral N-Channel RF Power MOSFET LDMOS (Dual), N-Channel Enhancement-Mode Lateral
Technology NXP HV7 LDMOS Airfast LDMOS, lateral N-channel
Drain-Source Voltage (VDS) Rated 65 V —
Operating Drain Voltage (VDD) 28 V (typical) —
Frequency Range 1930 MHz to 1990 MHz 1.93 GHz to 1.99 GHz
Output Power (Pout) 40 W average (W-CDMA, single-carrier) —
Power Gain 20 dB typical at 1987.5 MHz 20 dB (typical at Pout = 40 W)
Drain Efficiency 30% typical at 40 W, 1987.5 MHz 30% (typical at Pout = 40 W, W-CDMA)
Quiescent Drain Current (IDQ) 1250 mA 1250 mA
ACPR (5 MHz offset, 3.84 MHz channel) -36 dBc typical —
Input Signal PAR 7.5 dB @ 0.01% probability on CCDF 7.5 dB at 0.01% CCDF
Device Output Signal PAR 6 dB @ 0.01% probability on CCDF —
Gehäuse / Bauform NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged NI-780-4 (Case 465M-01, Style 1), ceramic flange
Montageart Chassis-mount (bolt-down) with ceramic lid Surface Mount (bolt-down flange)
Operating Mode Single-carrier W-CDMA, Class AB —
RoHS-Status Compliant [DATA_NEEDED: rohs status from manufacturer]
Typical Drain Voltage (VDD) — 28 V
Drain Voltage - Rated — 65 V
Output Power (Avg, W-CDMA) — 40 W
ACPR — -36 dBc at 5 MHz offset (3.84 MHz channel)
Output Signal PAR — 6 dB at 0.01% CCDF

Datenblätter & Ressourcen

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