MD7P19130HSR3 vs MD7P19130HR3 比較
詳細な並列比較: MD7P19130HSR3 メーカー: NXP Semiconductors および MD7P19130HR3 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | MD7P19130HSR3 | MD7P19130HR3 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $65.10 | $69.50 |
| トランジスタタイプ | LDMOS (Dual), Lateral N-Channel RF Power MOSFET | LDMOS (Dual), N-Channel Enhancement-Mode Lateral |
| Technology | NXP HV7 LDMOS | Airfast LDMOS, lateral N-channel |
| Drain-Source Voltage (VDS) Rated | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Frequency Range | 1930 MHz to 1990 MHz | 1.93 GHz to 1.99 GHz |
| Output Power (Pout) | 40 W average (W-CDMA, single-carrier) | — |
| Power Gain | 20 dB typical at 1987.5 MHz | 20 dB (typical at Pout = 40 W) |
| Drain Efficiency | 30% typical at 40 W, 1987.5 MHz | 30% (typical at Pout = 40 W, W-CDMA) |
| Quiescent Drain Current (IDQ) | 1250 mA | 1250 mA |
| ACPR (5 MHz offset, 3.84 MHz channel) | -36 dBc typical | — |
| Input Signal PAR | 7.5 dB @ 0.01% probability on CCDF | 7.5 dB at 0.01% CCDF |
| Device Output Signal PAR | 6 dB @ 0.01% probability on CCDF | — |
| パッケージ / ケース | NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged | NI-780-4 (Case 465M-01, Style 1), ceramic flange |
| 実装タイプ | Chassis-mount (bolt-down) with ceramic lid | Surface Mount (bolt-down flange) |
| Operating Mode | Single-carrier W-CDMA, Class AB | — |
| RoHS ステータス | Compliant | [DATA_NEEDED: rohs status from manufacturer] |
| Typical Drain Voltage (VDD) | — | 28 V |
| Drain Voltage - Rated | — | 65 V |
| Output Power (Avg, W-CDMA) | — | 40 W |
| ACPR | — | -36 dBc at 5 MHz offset (3.84 MHz channel) |
| Output Signal PAR | — | 6 dB at 0.01% CCDF |