MD7P19130HSR3 vs MD7P19130HR3 Comparação

Comparação detalhada lado a lado de MD7P19130HSR3 por NXP Semiconductors e MD7P19130HR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MD7P19130HSR3 MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 ✓ Ativo
NXP Semiconductors
MD7P19130HR3 MD7P19130HR3 - 40W, 1990 MHz RF Power LDMOS | NXP

MD7P19130HR3 - 40W, 1990 MHz RF Power LDMOS | NXP

MD7P19130HR3 ✓ Ativo

Comparação de especificações

Parâmetro MD7P19130HSR3 MD7P19130HR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $65,10 $69,50
Tipo de transistor LDMOS (Dual), Lateral N-Channel RF Power MOSFET LDMOS (Dual), N-Channel Enhancement-Mode Lateral
Technology NXP HV7 LDMOS Airfast LDMOS, lateral N-channel
Drain-Source Voltage (VDS) Rated 65 V —
Operating Drain Voltage (VDD) 28 V (typical) —
Frequency Range 1930 MHz to 1990 MHz 1.93 GHz to 1.99 GHz
Output Power (Pout) 40 W average (W-CDMA, single-carrier) —
Power Gain 20 dB typical at 1987.5 MHz 20 dB (typical at Pout = 40 W)
Drain Efficiency 30% typical at 40 W, 1987.5 MHz 30% (typical at Pout = 40 W, W-CDMA)
Quiescent Drain Current (IDQ) 1250 mA 1250 mA
ACPR (5 MHz offset, 3.84 MHz channel) -36 dBc typical —
Input Signal PAR 7.5 dB @ 0.01% probability on CCDF 7.5 dB at 0.01% CCDF
Device Output Signal PAR 6 dB @ 0.01% probability on CCDF —
Encapsulamento / Caixa NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged NI-780-4 (Case 465M-01, Style 1), ceramic flange
Tipo de montagem Chassis-mount (bolt-down) with ceramic lid Surface Mount (bolt-down flange)
Operating Mode Single-carrier W-CDMA, Class AB —
Status RoHS Compliant [DATA_NEEDED: rohs status from manufacturer]
Typical Drain Voltage (VDD) — 28 V
Drain Voltage - Rated — 65 V
Output Power (Avg, W-CDMA) — 40 W
ACPR — -36 dBc at 5 MHz offset (3.84 MHz channel)
Output Signal PAR — 6 dB at 0.01% CCDF

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