MD7P19130HSR3 vs MD7P19130HSR5 Vergleich
Detaillierter Direktvergleich von MD7P19130HSR3 von NXP Semiconductors und MD7P19130HSR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MD7P19130HSR3 | MD7P19130HSR5 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $65,10 | $58,10 |
| Transistortyp | LDMOS (Dual), Lateral N-Channel RF Power MOSFET | LDMOS (Dual), N-Channel |
| Technology | NXP HV7 LDMOS | RF Power LDMOS |
| Drain-Source Voltage (VDS) Rated | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Output Power (Pout) | 40 W average (W-CDMA, single-carrier) | 40 W (minimum, CW) |
| Power Gain | 20 dB typical at 1987.5 MHz | — |
| Drain Efficiency | 30% typical at 40 W, 1987.5 MHz | — |
| Quiescent Drain Current (IDQ) | 1250 mA | — |
| ACPR (5 MHz offset, 3.84 MHz channel) | -36 dBc typical | — |
| Input Signal PAR | 7.5 dB @ 0.01% probability on CCDF | — |
| Device Output Signal PAR | 6 dB @ 0.01% probability on CCDF | — |
| Gehäuse / Bauform | NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged | NI-780HS-4L (NI780HS-4 ceramic, flange mount) |
| Montageart | Chassis-mount (bolt-down) with ceramic lid | Chassis / Flange Mount (through-hole flange) |
| Operating Mode | Single-carrier W-CDMA, Class AB | — |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MD7P19130HSR5 |
| Drain-Source Voltage (VDS) | — | 28 V (typical operating), 65 V (rated) |
| Drain Current (Continuous) | — | 1.25 A |
| Power Gain (Gp) | — | 20 dB (typical at 1.99 GHz) |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Frequency Band | — | DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3 |
| Weight | — | 6.47 g |
| Test Conditions | — | VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW |