MD7P19130HSR3 vs MD7P19130HSR5 Comparação

Comparação detalhada lado a lado de MD7P19130HSR3 por NXP Semiconductors e MD7P19130HSR5 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MD7P19130HSR3 MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 ✓ Ativo
NXP Semiconductors
MD7P19130HSR5 MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP

MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP

MD7P19130HSR5 ✓ Ativo

Comparação de especificações

Parâmetro MD7P19130HSR3 MD7P19130HSR5
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $65,10 $58,10
Tipo de transistor LDMOS (Dual), Lateral N-Channel RF Power MOSFET LDMOS (Dual), N-Channel
Technology NXP HV7 LDMOS RF Power LDMOS
Drain-Source Voltage (VDS) Rated 65 V —
Operating Drain Voltage (VDD) 28 V (typical) —
Frequency Range 1930 MHz to 1990 MHz —
Output Power (Pout) 40 W average (W-CDMA, single-carrier) 40 W (minimum, CW)
Power Gain 20 dB typical at 1987.5 MHz —
Drain Efficiency 30% typical at 40 W, 1987.5 MHz —
Quiescent Drain Current (IDQ) 1250 mA —
ACPR (5 MHz offset, 3.84 MHz channel) -36 dBc typical —
Input Signal PAR 7.5 dB @ 0.01% probability on CCDF —
Device Output Signal PAR 6 dB @ 0.01% probability on CCDF —
Encapsulamento / Caixa NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged NI-780HS-4L (NI780HS-4 ceramic, flange mount)
Tipo de montagem Chassis-mount (bolt-down) with ceramic lid Chassis / Flange Mount (through-hole flange)
Operating Mode Single-carrier W-CDMA, Class AB —
Status RoHS Compliant Compliant
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MD7P19130HSR5
Drain-Source Voltage (VDS) — 28 V (typical operating), 65 V (rated)
Drain Current (Continuous) — 1.25 A
Power Gain (Gp) — 20 dB (typical at 1.99 GHz)
Operating Frequency — 1.93 GHz to 1.99 GHz
Frequency Band — DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3
Weight — 6.47 g
Test Conditions — VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW

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