MD7P19130HSR3 vs MD7P19130HSR5 Comparación

Comparación detallada lado a lado de MD7P19130HSR3 por NXP Semiconductors y MD7P19130HSR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MD7P19130HSR3 MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 ✓ Activo
NXP Semiconductors
MD7P19130HSR5 MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP

MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP

MD7P19130HSR5 ✓ Activo

Comparación de especificaciones

Parámetro MD7P19130HSR3 MD7P19130HSR5
Marca NXP Semiconductors NXP Semiconductors
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $65,10 $58,10
Tipo de transistor LDMOS (Dual), Lateral N-Channel RF Power MOSFET LDMOS (Dual), N-Channel
Technology NXP HV7 LDMOS RF Power LDMOS
Drain-Source Voltage (VDS) Rated 65 V —
Operating Drain Voltage (VDD) 28 V (typical) —
Frequency Range 1930 MHz to 1990 MHz —
Output Power (Pout) 40 W average (W-CDMA, single-carrier) 40 W (minimum, CW)
Power Gain 20 dB typical at 1987.5 MHz —
Drain Efficiency 30% typical at 40 W, 1987.5 MHz —
Quiescent Drain Current (IDQ) 1250 mA —
ACPR (5 MHz offset, 3.84 MHz channel) -36 dBc typical —
Input Signal PAR 7.5 dB @ 0.01% probability on CCDF —
Device Output Signal PAR 6 dB @ 0.01% probability on CCDF —
Encapsulado / Carcasa NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged NI-780HS-4L (NI780HS-4 ceramic, flange mount)
Tipo de montaje Chassis-mount (bolt-down) with ceramic lid Chassis / Flange Mount (through-hole flange)
Operating Mode Single-carrier W-CDMA, Class AB —
Estado RoHS Compliant Compliant
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MD7P19130HSR5
Drain-Source Voltage (VDS) — 28 V (typical operating), 65 V (rated)
Drain Current (Continuous) — 1.25 A
Power Gain (Gp) — 20 dB (typical at 1.99 GHz)
Operating Frequency — 1.93 GHz to 1.99 GHz
Frequency Band — DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3
Weight — 6.47 g
Test Conditions — VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW

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