MD7P19130HSR3 vs MD7P19130HSR5 비교
다음의 상세 나란히 비교: MD7P19130HSR3 제조: NXP Semiconductors 및 MD7P19130HSR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MD7P19130HSR3 | MD7P19130HSR5 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $65.10 | $58.10 |
| 트랜지스터 유형 | LDMOS (Dual), Lateral N-Channel RF Power MOSFET | LDMOS (Dual), N-Channel |
| Technology | NXP HV7 LDMOS | RF Power LDMOS |
| Drain-Source Voltage (VDS) Rated | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Output Power (Pout) | 40 W average (W-CDMA, single-carrier) | 40 W (minimum, CW) |
| Power Gain | 20 dB typical at 1987.5 MHz | — |
| Drain Efficiency | 30% typical at 40 W, 1987.5 MHz | — |
| Quiescent Drain Current (IDQ) | 1250 mA | — |
| ACPR (5 MHz offset, 3.84 MHz channel) | -36 dBc typical | — |
| Input Signal PAR | 7.5 dB @ 0.01% probability on CCDF | — |
| Device Output Signal PAR | 6 dB @ 0.01% probability on CCDF | — |
| 패키지 / 케이스 | NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged | NI-780HS-4L (NI780HS-4 ceramic, flange mount) |
| 실장 유형 | Chassis-mount (bolt-down) with ceramic lid | Chassis / Flange Mount (through-hole flange) |
| Operating Mode | Single-carrier W-CDMA, Class AB | — |
| RoHS 상태 | Compliant | Compliant |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MD7P19130HSR5 |
| Drain-Source Voltage (VDS) | — | 28 V (typical operating), 65 V (rated) |
| Drain Current (Continuous) | — | 1.25 A |
| Power Gain (Gp) | — | 20 dB (typical at 1.99 GHz) |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Frequency Band | — | DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3 |
| Weight | — | 6.47 g |
| Test Conditions | — | VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW |