MMBF170LT1 vs 2N7002LT1G Vergleich
Detaillierter Direktvergleich von MMBF170LT1 von onsemi und 2N7002LT1G von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MMBF170LT1 | 2N7002LT1G |
|---|---|---|
| Marke | onsemi | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,09 | $0,02 |
| Manufacturer | onsemi (ON Semiconductor) | onsemi (ON Semiconductor) |
| Part Number | MMBF170LT1 | — |
| Transistortyp | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (VDSS) | 60 V | — |
| Drain-Gate Voltage (VDGS) | 60 Vdc | — |
| Gate-Source Voltage - Continuous (VGS) | ±20 Vdc (per datasheet) | — |
| Gate-Source Voltage - Non-repetitive (VGSM) | ±40 Vpk (tp <= 50 ms) | — |
| Continuous Drain Current (ID) | 500 mA (Ta) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Total Device Dissipation (PD) | 225 mW (Ta, FR-5 board) | — |
| Betriebstemperaturbereich | -55 °C to +150 °C (TJ max per datasheet) | [DATA_NEEDED: operating temperature range] |
| Gehäuse / Bauform | SOT-23-3 (TO-236) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 | — |
| RoHS-Status | Compliant (per onsemi product page) | — |
| AEC-Q101 Qualified | Yes (per datasheet) | — |
| Technology | DMOS | MOSFET |
| Polarity | N-Channel | N-Channel |
| Channel Mode | — | Enhancement Mode |
| Drain-Source Voltage VDSS | — | 60 V |
| Continuous Drain Current ID | — | 115 mA (Tc) |
| Power Dissipation PD | — | 225 mW (Ta) |
| Maximum RDS(on) | — | 7.5 ohm @ VGS = 5 V |
| Configuration | — | Single FET |
| Gehäuse | — | SOT-23-3 (TO-236) |
| Anzahl der Pins | — | 3 |
| Kategorie | — | Small Signal MOSFET |
| Lead Finish | — | [DATA_NEEDED: lead finish/plating] |
| Packaging | — | [DATA_NEEDED: packaging type] |