MMBF170LT1 vs 2N7002LT1G 对比

详细并排对比 MMBF170LT1 出自 onsemi 和 2N7002LT1G 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

onsemi
2N7002LT1G 2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G ✓ 量产中

规格对比

参数 MMBF170LT1 2N7002LT1G
品牌 onsemi onsemi
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.09 $0.02
Manufacturer onsemi (ON Semiconductor) onsemi (ON Semiconductor)
Part Number MMBF170LT1 —
晶体管类型 N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDSS) 60 V —
Drain-Gate Voltage (VDGS) 60 Vdc —
Gate-Source Voltage - Continuous (VGS) ±20 Vdc (per datasheet) —
Gate-Source Voltage - Non-repetitive (VGSM) ±40 Vpk (tp <= 50 ms) —
Continuous Drain Current (ID) 500 mA (Ta) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Total Device Dissipation (PD) 225 mW (Ta, FR-5 board) —
工作温度范围 -55 °C to +150 °C (TJ max per datasheet) [DATA_NEEDED: operating temperature range]
封装 / 外壳 SOT-23-3 (TO-236) —
安装类型 Surface Mount Surface Mount
引脚数量 3 —
RoHS 状态 Compliant (per onsemi product page) —
AEC-Q101 Qualified Yes (per datasheet) —
Technology DMOS MOSFET
Polarity N-Channel N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Configuration — Single FET
封装 — SOT-23-3 (TO-236)
引脚数 — 3
分类 — Small Signal MOSFET
Lead Finish — [DATA_NEEDED: lead finish/plating]
Packaging — [DATA_NEEDED: packaging type]

数据手册与资源

浏览全部产品 创建 BOM 获取报价