MPX2010D vs MPX2010DP Vergleich
Detaillierter Direktvergleich von MPX2010D von STMicroelectronics und MPX2010DP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
MPX2010D - 10kPa Differential Pressure Sensor | STMicroelectronics
MPX2010D ✓ AktivSpezifikationsvergleich
| Parameter | MPX2010D | MPX2010DP |
|---|---|---|
| Marke | STMicroelectronics | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,10 | $8,50 |
| Pressure Type | Differential (Port 1 vs Port 2) | — |
| Operating Pressure Range | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) | — |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | 75 kPa |
| Ausgangstyp | Analog Wheatstone Bridge (mV) | Analog voltage, Wheatstone bridge (mV level) |
| Output Voltage Span | 0 mV to 25 mV at 10V excitation | — |
| Sensitivity | 2.5 mV/kPa (nominal, at 10V excitation) | — |
| Excitation Voltage | 10 V (typical), 16 V (maximum) | — |
| Linearity | 0.1% of full-scale (typical) | ±0.05% (typ) |
| Betriebstemperaturbereich | 0 C to +85 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Gehäuse / Bauform | 4-SIP Module (Case 344-15) | — |
| Montageart | Through-Hole | — |
| Anzahl der Pins | 4 | — |
| On-Chip Temperature Compensation | Yes (laser trimmed) | — |
| Bridge Configuration | 4-arm piezoresistive Wheatstone | — |
| RoHS-Status | [DATA_NEEDED: RoHS status from ST datasheet] | Compliant |
| Sensor Family | MPX2010 / MPXV2010G / MPXM2010 | — |
| Diaphragm Type | Single monolithic silicon | — |
| Sensortyp | — | Differential Pressure Sensor |
| Pressure Range | — | 0 to 10 kPa (0 to 1.45 PSI) |
| Technology | — | Piezoresistive (silicon strain gauge bridge) |
| Typical Full-Scale Span | — | 25 mV at 10 V excitation |
| Zero Pressure Offset | — | 0 mV nominally (±1.0 mV max) |
| Versorgungsspannung | — | 10 V DC typical (max 16 V) |
| Temperature Compensation | — | 0 °C to +85 °C (on-chip) |
| Betriebstemperatur | — | -40 °C to +125 °C |
| Response Time | — | 1.0 ms (typical) |
| Burst Pressure | — | 200 kPa |
| Port Configuration | — | Dual ports (differential), 0.19 inch / 4.93 mm tubes |
| Package / Mounting | — | 4-SIP Module (through-hole with axial tubes) |
| Media Compatibility | — | Dry air or non-corrosive gas |