MPX2010D vs MPX2010DP Comparación
Comparación detallada lado a lado de MPX2010D por STMicroelectronics y MPX2010DP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
MPX2010D - 10kPa Differential Pressure Sensor | STMicroelectronics
MPX2010D ✓ ActivoComparación de especificaciones
| Parámetro | MPX2010D | MPX2010DP |
|---|---|---|
| Marca | STMicroelectronics | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,10 | $8,50 |
| Pressure Type | Differential (Port 1 vs Port 2) | — |
| Operating Pressure Range | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) | — |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | 75 kPa |
| Tipo de salida | Analog Wheatstone Bridge (mV) | Analog voltage, Wheatstone bridge (mV level) |
| Output Voltage Span | 0 mV to 25 mV at 10V excitation | — |
| Sensitivity | 2.5 mV/kPa (nominal, at 10V excitation) | — |
| Excitation Voltage | 10 V (typical), 16 V (maximum) | — |
| Linearity | 0.1% of full-scale (typical) | ±0.05% (typ) |
| Rango de temperatura de funcionamiento | 0 C to +85 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Encapsulado / Carcasa | 4-SIP Module (Case 344-15) | — |
| Tipo de montaje | Through-Hole | — |
| Número de pines | 4 | — |
| On-Chip Temperature Compensation | Yes (laser trimmed) | — |
| Bridge Configuration | 4-arm piezoresistive Wheatstone | — |
| Estado RoHS | [DATA_NEEDED: RoHS status from ST datasheet] | Compliant |
| Sensor Family | MPX2010 / MPXV2010G / MPXM2010 | — |
| Diaphragm Type | Single monolithic silicon | — |
| Tipo de sensor | — | Differential Pressure Sensor |
| Pressure Range | — | 0 to 10 kPa (0 to 1.45 PSI) |
| Technology | — | Piezoresistive (silicon strain gauge bridge) |
| Typical Full-Scale Span | — | 25 mV at 10 V excitation |
| Zero Pressure Offset | — | 0 mV nominally (±1.0 mV max) |
| Tensión de alimentación | — | 10 V DC typical (max 16 V) |
| Temperature Compensation | — | 0 °C to +85 °C (on-chip) |
| Temperatura de funcionamiento | — | -40 °C to +125 °C |
| Response Time | — | 1.0 ms (typical) |
| Burst Pressure | — | 200 kPa |
| Port Configuration | — | Dual ports (differential), 0.19 inch / 4.93 mm tubes |
| Package / Mounting | — | 4-SIP Module (through-hole with axial tubes) |
| Media Compatibility | — | Dry air or non-corrosive gas |