MPX2100AP vs MPX2100D Vergleich
Detaillierter Direktvergleich von MPX2100AP von STMicroelectronics und MPX2100D von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
MPX2100AP - 100kPa Absolute Pressure Sensor | STMicroelectronics
MPX2100AP ✓ AktivSpezifikationsvergleich
| Parameter | MPX2100AP | MPX2100D |
|---|---|---|
| Marke | STMicroelectronics | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $11,85 | $17,80 |
| Pressure Type | Absolute | Differential |
| Operating Pressure Range | 0 to 100 kPa (0 to 14.5 psi) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Ausgangstyp | Analog Voltage (Wheatstone bridge) | Analog ratiometric Wheatstone bridge (millivolts) |
| Full-Scale Output Span | 40 mV typical at 10 V excitation | — |
| Offset (Zero Pressure) | 0 mV typical | — |
| Excitation Voltage | 10 V DC typical | — |
| Linearity | ±0.25% (Full-Scale Span) | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |
| Temperature Compensation | On-chip, ±0.5% over 0°C to 85°C | — |
| Betriebstemperaturbereich | -40°C to +125°C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Port Style | Axial Male Tube, 0.19 inch (4.93 mm) | — |
| Package Type | 4-SIP Module | — |
| Sensor Technology | Silicon Piezoresistive | — |
| Media Compatibility | Dry gases (non-corrosive) | — |
| Montageart | Through-Hole (SIP) | Through-hole SIP module |
| RoHS-Status | [DATA_NEEDED: RoHS compliance status] | Compliant [DATA_NEEDED: confirm from NXP product page] |
| MSL-Level | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Gehäuse | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |