MPX2100AP vs MPX2100D Comparaison

Comparaison détaillée côte à côte de MPX2100AP par STMicroelectronics et MPX2100D par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

NXP Semiconductors
MPX2100D MPX2100D - 100kPa Differential Pressure Sensor | NXP/STMicro

MPX2100D - 100kPa Differential Pressure Sensor | NXP/STMicro

MPX2100D ✓ Actif

Comparaison des spécifications

Paramètre MPX2100AP MPX2100D
Marque STMicroelectronics NXP Semiconductors
Catégorie Pressure Sensors Pressure Sensors
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $11,85 $17,80
Pressure Type Absolute Differential
Operating Pressure Range 0 to 100 kPa (0 to 14.5 psi) 0 kPa to 100 kPa (0 to 14.5 psi)
Type de sortie Analog Voltage (Wheatstone bridge) Analog ratiometric Wheatstone bridge (millivolts)
Full-Scale Output Span 40 mV typical at 10 V excitation —
Offset (Zero Pressure) 0 mV typical —
Excitation Voltage 10 V DC typical —
Linearity ±0.25% (Full-Scale Span) 0.1% to 0.3% typical [DATA_NEEDED: confirm]
Temperature Compensation On-chip, ±0.5% over 0°C to 85°C —
Plage de température de fonctionnement -40°C to +125°C -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
Storage Temperature Range [DATA_NEEDED: storage temperature range] —
Port Style Axial Male Tube, 0.19 inch (4.93 mm) —
Package Type 4-SIP Module —
Sensor Technology Silicon Piezoresistive —
Media Compatibility Dry gases (non-corrosive) —
Type de montage Through-Hole (SIP) Through-hole SIP module
Statut RoHS [DATA_NEEDED: RoHS compliance status] Compliant [DATA_NEEDED: confirm from NXP product page]
Niveau MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Full-Scale Span (Typical) — 40 mV at 10 V excitation
Sensitivity (Nominal) — 0.4 mV/kPa
Supply Voltage (Recommended) — 10 V DC
Supply Voltage (Maximum) — 16 V DC
Pressure Port Configuration — Dual axial ports (differential)
Boîtier — 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch
Package Body Dimensions — 15.56 mm x 15.56 mm x 5.33 mm
On-Chip Temperature Compensation — Yes (factory laser-trimmed)
Technology — Silicon piezoresistive MEMS strain-gauge bridge
Diaphragm Material — Silicon [DATA_NEEDED: confirm]

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