MPX2100AP vs MPX2100D Comparação

Comparação detalhada lado a lado de MPX2100AP por STMicroelectronics e MPX2100D por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MPX2100D MPX2100D - 100kPa Differential Pressure Sensor | NXP/STMicro

MPX2100D - 100kPa Differential Pressure Sensor | NXP/STMicro

MPX2100D ✓ Ativo

Comparação de especificações

Parâmetro MPX2100AP MPX2100D
Marca STMicroelectronics NXP Semiconductors
Categoria Pressure Sensors Pressure Sensors
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $11,85 $17,80
Pressure Type Absolute Differential
Operating Pressure Range 0 to 100 kPa (0 to 14.5 psi) 0 kPa to 100 kPa (0 to 14.5 psi)
Tipo de saída Analog Voltage (Wheatstone bridge) Analog ratiometric Wheatstone bridge (millivolts)
Full-Scale Output Span 40 mV typical at 10 V excitation —
Offset (Zero Pressure) 0 mV typical —
Excitation Voltage 10 V DC typical —
Linearity ±0.25% (Full-Scale Span) 0.1% to 0.3% typical [DATA_NEEDED: confirm]
Temperature Compensation On-chip, ±0.5% over 0°C to 85°C —
Faixa de temperatura de operação -40°C to +125°C -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
Storage Temperature Range [DATA_NEEDED: storage temperature range] —
Port Style Axial Male Tube, 0.19 inch (4.93 mm) —
Package Type 4-SIP Module —
Sensor Technology Silicon Piezoresistive —
Media Compatibility Dry gases (non-corrosive) —
Tipo de montagem Through-Hole (SIP) Through-hole SIP module
Status RoHS [DATA_NEEDED: RoHS compliance status] Compliant [DATA_NEEDED: confirm from NXP product page]
Nível MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Full-Scale Span (Typical) — 40 mV at 10 V excitation
Sensitivity (Nominal) — 0.4 mV/kPa
Supply Voltage (Recommended) — 10 V DC
Supply Voltage (Maximum) — 16 V DC
Pressure Port Configuration — Dual axial ports (differential)
Encapsulamento — 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch
Package Body Dimensions — 15.56 mm x 15.56 mm x 5.33 mm
On-Chip Temperature Compensation — Yes (factory laser-trimmed)
Technology — Silicon piezoresistive MEMS strain-gauge bridge
Diaphragm Material — Silicon [DATA_NEEDED: confirm]

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