MPX2100AP vs MPX2100D Comparación
Comparación detallada lado a lado de MPX2100AP por STMicroelectronics y MPX2100D por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
MPX2100AP - 100kPa Absolute Pressure Sensor | STMicroelectronics
MPX2100AP ✓ ActivoComparación de especificaciones
| Parámetro | MPX2100AP | MPX2100D |
|---|---|---|
| Marca | STMicroelectronics | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $11,85 | $17,80 |
| Pressure Type | Absolute | Differential |
| Operating Pressure Range | 0 to 100 kPa (0 to 14.5 psi) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Tipo de salida | Analog Voltage (Wheatstone bridge) | Analog ratiometric Wheatstone bridge (millivolts) |
| Full-Scale Output Span | 40 mV typical at 10 V excitation | — |
| Offset (Zero Pressure) | 0 mV typical | — |
| Excitation Voltage | 10 V DC typical | — |
| Linearity | ±0.25% (Full-Scale Span) | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |
| Temperature Compensation | On-chip, ±0.5% over 0°C to 85°C | — |
| Rango de temperatura de funcionamiento | -40°C to +125°C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Port Style | Axial Male Tube, 0.19 inch (4.93 mm) | — |
| Package Type | 4-SIP Module | — |
| Sensor Technology | Silicon Piezoresistive | — |
| Media Compatibility | Dry gases (non-corrosive) | — |
| Tipo de montaje | Through-Hole (SIP) | Through-hole SIP module |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Nivel MSL | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Encapsulado | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |