MRF18030BLSR3 vs MRF18060BLSR3 Vergleich
Detaillierter Direktvergleich von MRF18030BLSR3 von NXP Semiconductors und MRF18060BLSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP
MRF18030BLSR3 ✓ AktivNXP Semiconductors
MRF18060BLSR3 - 60W RF Power MOSFET 1930-1990 MHz | NXP
MRF18060BLSR3 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | MRF18030BLSR3 | MRF18060BLSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Letzte Kaufgelegenheit |
| Manufacturer | Analog Devices / NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale/Motorola) |
| Part Number | MRF18030BLSR3 | — |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | Lateral N-Channel Enhancement-Mode MOSFET |
| Technology | LDMOS, laterally diffused metal-oxide-semiconductor | — |
| Configuration | Single, common-source RF power transistor | Single N-channel |
| Operating Frequency Range | 1.8 GHz to 2 GHz (specified 1930-1990 MHz) | — |
| Target Application Band | GSM / GSM-EDGE / DCS-1900 / PCS-1900 | — |
| Drain-Source Voltage (VDSS) | 26 V typical operating | 26 V |
| Output Power (Pout) | 30 W (CW or pulsed, in-band) | 60 W CW |
| Power Gain | 14 dB typical at 2 GHz | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency %] | [DATA_NEEDED: drain efficiency percentage] |
| Maximum Power Dissipation (Abs) | 83.3 W | — |
| Operating Mode | Enhancement Mode | — |
| Drain Current (Id) at test condition | 250 mA (quiescent / small-signal reference) | — |
| Gehäuse | NI-400S (CASE 465E-04, Style 1), ceramic surface mount | — |
| Montageart | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Per NXP product page (verify with current data) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Betriebs-Sperrschichttemperatur | [DATA_NEEDED: max junction temperature C] | — |
| Frequency Range | — | 1930 MHz to 1990 MHz (specified band), 1800-2000 MHz (operational) |
| Test Voltage (VDD) | — | 26 V |
| Power Gain (Gps) | — | 13 dB (typical) |
| Maximum Power Dissipation (Absolute) | — | 180 W |
| Maximum Drain Current | — | [DATA_NEEDED: maximum DC drain current] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Gehäuse / Bauform | — | NI-780S (CASE 465-06, Style 1), ceramic surface-mount |
| Peak Reflow Temperature | — | 260 C |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| RoHS-Status | — | [DATA_NEEDED: RoHS compliance] |