MRF18030BLSR3 vs MRF18060BLSR3 Сравнение
Подробное сравнение бок о бок MRF18030BLSR3 от NXP Semiconductors и MRF18060BLSR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP
MRF18030BLSR3 ✓ АктивенNXP Semiconductors
MRF18060BLSR3 - 60W RF Power MOSFET 1930-1990 MHz | NXP
MRF18060BLSR3 ⚠ Последняя закупкаСравнение характеристик
| Параметр | MRF18030BLSR3 | MRF18060BLSR3 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Последняя закупка |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $52,10 | $27,85 |
| Manufacturer | Analog Devices / NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale/Motorola) |
| Part Number | MRF18030BLSR3 | — |
| Тип транзистора | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | Lateral N-Channel Enhancement-Mode MOSFET |
| Technology | LDMOS, laterally diffused metal-oxide-semiconductor | — |
| Configuration | Single, common-source RF power transistor | Single N-channel |
| Operating Frequency Range | 1.8 GHz to 2 GHz (specified 1930-1990 MHz) | — |
| Target Application Band | GSM / GSM-EDGE / DCS-1900 / PCS-1900 | — |
| Drain-Source Voltage (VDSS) | 26 V typical operating | 26 V |
| Output Power (Pout) | 30 W (CW or pulsed, in-band) | 60 W CW |
| Power Gain | 14 dB typical at 2 GHz | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency %] | [DATA_NEEDED: drain efficiency percentage] |
| Maximum Power Dissipation (Abs) | 83.3 W | — |
| Operating Mode | Enhancement Mode | — |
| Drain Current (Id) at test condition | 250 mA (quiescent / small-signal reference) | — |
| Корпус | NI-400S (CASE 465E-04, Style 1), ceramic surface mount | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Per NXP product page (verify with current data) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Рабочая температура перехода | [DATA_NEEDED: max junction temperature C] | — |
| Frequency Range | — | 1930 MHz to 1990 MHz (specified band), 1800-2000 MHz (operational) |
| Test Voltage (VDD) | — | 26 V |
| Power Gain (Gps) | — | 13 dB (typical) |
| Maximum Power Dissipation (Absolute) | — | 180 W |
| Maximum Drain Current | — | [DATA_NEEDED: maximum DC drain current] |
| Диапазон рабочих температур | — | [DATA_NEEDED: operating temperature range] |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Корпус / Типоразмер | — | NI-780S (CASE 465-06, Style 1), ceramic surface-mount |
| Peak Reflow Temperature | — | 260 C |
| Уровень MSL | — | [DATA_NEEDED: MSL rating] |
| Статус RoHS | — | [DATA_NEEDED: RoHS compliance] |