MRF18030BLSR3 vs MRF18060BLSR3 비교

다음의 상세 나란히 비교: MRF18030BLSR3 제조: NXP Semiconductors 및 MRF18060BLSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF18030BLSR3 MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP

MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP

MRF18030BLSR3 ✓ 활성
NXP Semiconductors
MRF18060BLSR3 MRF18060BLSR3 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF18060BLSR3 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF18060BLSR3 ⚠ 최종 구매

사양 비교

파라미터 MRF18030BLSR3 MRF18060BLSR3
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 최종 구매
재고 상태 In Stock In Stock
단가 (USD) $52.10 $27.85
Manufacturer Analog Devices / NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale/Motorola)
Part Number MRF18030BLSR3 —
트랜지스터 유형 N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) Lateral N-Channel Enhancement-Mode MOSFET
Technology LDMOS, laterally diffused metal-oxide-semiconductor —
Configuration Single, common-source RF power transistor Single N-channel
Operating Frequency Range 1.8 GHz to 2 GHz (specified 1930-1990 MHz) —
Target Application Band GSM / GSM-EDGE / DCS-1900 / PCS-1900 —
Drain-Source Voltage (VDSS) 26 V typical operating 26 V
Output Power (Pout) 30 W (CW or pulsed, in-band) 60 W CW
Power Gain 14 dB typical at 2 GHz —
Drain Efficiency [DATA_NEEDED: typical drain efficiency %] [DATA_NEEDED: drain efficiency percentage]
Maximum Power Dissipation (Abs) 83.3 W —
Operating Mode Enhancement Mode —
Drain Current (Id) at test condition 250 mA (quiescent / small-signal reference) —
패키지 NI-400S (CASE 465E-04, Style 1), ceramic surface mount —
실장 유형 Surface Mount Surface Mount
Lead-Free / RoHS Per NXP product page (verify with current data) —
Storage Temperature [DATA_NEEDED: storage temperature range] —
동작 접합 온도 [DATA_NEEDED: max junction temperature C] —
Frequency Range — 1930 MHz to 1990 MHz (specified band), 1800-2000 MHz (operational)
Test Voltage (VDD) — 26 V
Power Gain (Gps) — 13 dB (typical)
Maximum Power Dissipation (Absolute) — 180 W
Maximum Drain Current — [DATA_NEEDED: maximum DC drain current]
동작 온도 범위 — [DATA_NEEDED: operating temperature range]
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
패키지 / 케이스 — NI-780S (CASE 465-06, Style 1), ceramic surface-mount
Peak Reflow Temperature — 260 C
MSL 레벨 — [DATA_NEEDED: MSL rating]
RoHS 상태 — [DATA_NEEDED: RoHS compliance]

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