MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale
Teilenummer: MRF5S19060MBR1 ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $28.5 | $28,50 |
| 10 | $25.2 | $252,00 |
| 100 | $21.75 | $2.175,00 |
| 500 | $18.95 | $9.475,00 |
| 1.000 | $16.4 | $16.400,00 |
MRF5S19060MBR1 Übersicht
A lateral diffusion MOSFET (LDMOS) is the dominant RF power transistor technology for sub-6 GHz base station PAs because it combines high breakdown voltage, high gain, and excellent linearity within a single planar process. It belongs to the broader power MOSFET family (power MOSFET -> LDMOS -> RF power transistor -> RF semiconductor). The TO-270/TO-272 WB-4 overmolded plastic package exposes the drain lead on the package body and provides an integrated heat-spreading flange rated to 200 degrees C, replacing older ceramic packages used in earlier generation base-station PAs.
The MRF5S19060MBR1 integrates ESD protection and is supplied as internally-matched for ease of use in 50-ohm reference designs. Series-equivalent large-signal impedance parameters are documented in the manufacturer datasheet to streamline PCB matching-network design. The part is rated for 65 V drain breakdown, accepts 28 V nominal drain supply, and is specified for continuous-wave and modulated CDMA drive-up to its average 12 W output level.
Typical applications include PCN/PCS 1900 MHz base station final-stage power amplifiers, 2 x N-CDMA driver stages, WCDMA/LTE small-cell final PAs (where the device is operated below its rated power for linearity headroom), and general-purpose 1900 MHz industrial RF amplifiers. The integrated ESD cell reduces handling damage in factory assembly.
Designers should bias the gate with a small negative quiescent current (typically 10 uA Idq) and verify matching networks against the series-equivalent impedances published in the manufacturer datasheet. Heat-sinking the overmolded flange to a copper-clad PCB spreader is required to keep junction temperature below the 200 deg C package rating under continuous CDMA drive.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical RF design notes for the MRF5S19060MBR1 not found in the manufacturer datasheet alone.
Drop-in-Alternativen für MRF5S19060MBR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF5S19060MBR1 (gleiche Bauform und Footprint) – abweichend in Transistor Type, Package, Output Power (Average), Configuration, Frequency Band.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF5S19060NR1
✅ Drop-In✓ Auf Lager
$17.95 / Stück
Datenblatt ansehen →MRF5S19060NBR1
✅ Drop-In✓ Auf Lager
$25.4 / Stück
Datenblatt ansehen →MRF5S19060MR1
✅ Drop-In✓ Auf Lager
$25.6 / Stück
Datenblatt ansehen →MRF5S19060MBR1
✅ Drop-In✓ Auf Lager
$16.4 / Stück
Datenblatt ansehen →MRF5S19060MBR1 Grenzwerte & elektrische Eigenschaften
| Transistortyp | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor |
| Frequency Band | 1.93 GHz to 1.99 GHz |
| Typical Operating Frequency | 1990 MHz |
| Drain-Source Voltage (Rated) | 65 V |
| Nominal Drain Operating Voltage | 28 V |
| Output Power (Average) | 12 W |
| Power Gain | 14 dB |
| Test Current (Drain) | 750 mA |
| Drain Current Rating (Leakage Spec) | 10 uA |
| VSWR Tolerance | 5:1 @ 28 Vdc, 1990 MHz, 12 W avg |
| Input Matching | Internally matched |
| ESD Protection | Integrated |
| Gehäuse | TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) |
| Package Outline | Case 1486-03, Style 1 |
| Montagestil | Flange / surface mount with thermal pad |
| Maximum Junction Temperature | 200 degree C |
| Packaging | Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) |
| Target Application | PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage |
MRF5S19060MBR1 Pin-Konfiguration
| Pin 1 | Drain — RF output / drain (Vdd) terminal; primary current path |
| Pin 2 | Gate — RF input / gate bias terminal; requires negative quiescent bias for Idq setting |
| Pin Tab | Source / Flange — Source connected to overmolded metal flange; also serves as thermal pad for PCB heat spreading |
Sicherer Arbeitsbereich (estimated from datasheet ratings)
Typische Anwendungen
MRF5S19060MBR1 ist geeignet für 6 Anwendungs: PCS 1900 MHz Base Station Final PA Stage, 2 x N-CDMA Driver Stage, WCDMA / LTE Small-Cell Final PA, Industrial 2 GHz RF Generator, Legacy PCS Repeater / Booster Amplifier, RF Power Lab Reference Design / Repair Replacement.
PCS 1900 MHz Base Station Final PA Stage
The MRF5S19060MBR1 delivers 12 W average output with 14 dB gain at 1990 MHz, the exact band assigned to PCS 1900 uplink/downlink paths in legacy 2G and 3G base stations. In a typical PA lineup the part sits between a smaller driver LDMOS and the antenna duplexer, biased at 28 V with 750 mA quiescent current per the datasheet. The integrated ESD cell and 5:1 VSWR tolerance directly address field reliability concerns in tower-mounted radios. Designers run the device slightly into compression for maximum efficiency while maintaining ACLR compliance for 2 x N-CDMA and WCDMA masks.
Empfohlen
2 x N-CDMA Driver Stage
Used as a driver ahead of the final-stage LDMOS, the MRF5S19060MBR1's 14 dB gain brings milliwatt-level CDMA inputs to the 10 to 12 W range required by the next-stage device. The 65 V drain breakdown rating provides safe headroom for the 28 V supply with load-transients seen in mismatched antenna conditions, and the 5:1 VSWR tolerance guarantees survival during antenna failure events. Internally matched input eliminates a matching section on the PCB, shrinking the driver-stage area. The TO-270 WB-4 overmolded plastic package simplifies mechanical assembly versus older ceramic parts.
Empfohlen
WCDMA / LTE Small-Cell Final PA
Small-cell radios in the 1900 MHz band can use the MRF5S19060MBR1 as the final PA when linearity targets are met by backing off output power to roughly one-third of its 12 W rating. At 4 to 6 W average output with WCDMA or LTE waveforms, ACLR remains comfortably within 3GPP specifications and DC power efficiency stays competitive for thermally constrained small-cell enclosures. The overmolded plastic flange solders directly to the PCB heat-spreader, removing the ceramic-to-PCB thermal interface material common in older reference designs.
Empfohlen
Industrial 2 GHz RF Generator
Industrial heating, plasma-ICR, and materials-processing RF generators operating in the unlicensed 2 GHz band benefit from the MRF5S19060MBR1's 12 W average rating, 14 dB gain, and 5:1 VSWR tolerance. The device delivers predictable continuous-wave output into reactive loads such as plasma chambers or RF heating applicators where mismatch events are routine. The integrated ESD cell guards against static discharge during field service. Designers typically operate below 10 W average to extend MTBF in 24/7 industrial environments, leaving comfortable thermal margin against the 200 degree C package rating.
Empfohlen
Legacy PCS Repeater / Booster Amplifier
In-building PCS repeaters and bidirectional amplifiers that boost 1900 MHz signals use the MRF5S19060MBR1 in driver or final stages because it provides 12 W average output in a compact overmolded package. The 14 dB gain reduces the number of cascaded stages required to reach the target output level, simplifying repeater PCB layout. Internally matched inputs and documented large-signal impedance parameters shorten reference-design cycles. The lead-free MRF5S19060NR1 successor allows repeater manufacturers to comply with current RoHS substance restrictions without re-laying the RF section.
Empfohlen
RF Power Lab Reference Design / Repair Replacement
Universities, RF design laboratories, and field-service technicians rely on the MRF5S19060MBR1 as a repair-replacement part for older 1990 MHz base-station PA assemblies and student-built RF amplifiers. The TO-270 WB-4 footprint is widely documented in textbook application circuits and on distributor pinout diagrams, making it ideal for instructional use. The datasheet publishes full series-equivalent large-signal impedances, allowing students to design matching networks with confidence. Where the original part is obsolete, the lead-free N-suffix successor offers a fully compatible repair option.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF5S19060MBR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF5S19060NR1 | MRF5S19060NBR1 | MRF5S19060MR1 |
|---|---|---|---|---|
| Package | TO-270 WB-4 (Case 1486-03) | TO-270 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-03) - same |
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 1990 MHz (1.93 - 1.99 GHz) | 1990 MHz (1.93 - 1.99 GHz) | 1990 MHz (1.93 - 1.99 GHz) | 1990 MHz (1.93 - 1.99 GHz) |
| Output Power (Average) | 12 W | 12 W | 12 W | 12 W |
| Power Gain | 14 dB | 14 dB | 14 dB | 14 dB |
| Drain Voltage (Nominal) | 28 V | 28 V | 28 V | 28 V |
| Lead-Free (RoHS) | No (legacy tin-lead terminations) | Yes (N-suffix = lead-free) | Yes (N-suffix = lead-free) | No (legacy tin-lead terminations) |
| Lifecycle Status | Obsolete (replaced by NR1/NBR1) | Lead-free successor, active in legacy stock | Lead-free tape-and-reel variant | Obsolete (replaced by NR1/NBR1) |
Wichtigste Unterscheidungsmerkmale
- Obsolete original SKU replaced by datasheet-confirmed drop-in N-suffix successor (vs. MRF5S19060NR1)
- Compact TO-270 WB-4 overmolded plastic vs larger ceramic/metal-ceramic RF packages (vs. Generic ceramic-packaged 12 W 1990 MHz LDMOS competitors)
- Internally matched for ease of use vs externally matched competitor parts (vs. Externally matched 12 W LDMOS RF power transistors)
Designhinweise
Estimated: at 28 V Vdd, 12 W average RF output and roughly 30% DC-to-RF efficiency, the device dissipates about 24 W DC input minus 12 W RF output = 12 W as heat. The TO-270 WB-4 overmolded plastic flange must be soldered to a PCB copper spreader of at least 1 square inch to keep the junction below the 200 degree C package rating in continuous-CDMA service. In free air without a heat-spreader, expect junction temperatures to exceed the rating within minutes. Apply a thin layer of thermal interface material only if the PCB spreader is not co-planar.
Do not attempt to substitute the MRF6S19100HR3 (100 W, NI-780 flange) onto a TO-270 WB-4 PCB - the packages and pin assignments are not interchangeable and the RF matching networks differ. For drop-in field replacement always choose the lead-free N-suffix variant MRF5S19060NR1 or its MB-suffix tape-and-reel form MRF5S19060NBR1; the manufacturer datasheet explicitly confirms form, fit, and function equivalence. Avoid static discharge during handling - although the part integrates ESD protection, repeated zaps will degrade the gate oxide over time.
Use the series-equivalent large-signal impedance parameters published in the manufacturer datasheet to design the output matching network; do not rely on small-signal S-parameters at full power. Place input and output matching networks on the top PCB layer with a continuous ground plane on layer 2, and stitch the source-flange ground with multiple vias around the package footprint. The gate bias line should be RF-decoupled with a 1 nF series capacitor and a 10 kohm resistor to set the quiescent current; a typical Idq of 10 to 50 mA is recommended per the datasheet for linearity.
Compliance-Informationen
Original MRF5S19060MBR1 uses legacy tin-lead terminations and is not RoHS-compliant. The N-suffix lead-free successor MRF5S19060NR1/NBR1 is the RoHS-compliant drop-in replacement. REACH and conflict-minerals status not separately documented in the verified web data; halogen-free status also not explicitly listed. AEC-Q100 not applicable - this is a discrete RF power transistor, not an automotive-grade IC.
