MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
Teilenummer: MRF5S19060MR1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $42.5 | $42,50 |
| 10 | $38.75 | $387,50 |
| 100 | $33.2 | $3.320,00 |
| 500 | $28.9 | $14.450,00 |
| 1.000 | $25.6 | $25.600,00 |
MRF5S19060MR1 Übersicht
An RF power MOSFET is a lateral double-diffused (LDMOS) transistor whose internal layout combines a short, low-loss gate structure with a high breakdown drain drift region, enabling high gain, broadband operation, and high ruggedness versus older bipolar or GaAs parts. LDMOS technology inherits from power MOSFET process nodes and is the dominant building block for sub-6 GHz base-station power amplifiers because it pairs silicon-economy pricing with sufficient RF performance for cellular PA macros and small cells.
Key features of the MRF5S19060MR1 include integrated ESD protection, an internal input matching network that simplifies PCB-level wideband design, gold metallization on the source and gate pads for long-term reliability, and a thermally-enhanced TO-270 WB-4 ceramic package. The part is specified for class-AB operation with a quiescent point (Iq) typically set near 100 mA for linear 2 x N-CDMA waveforms. Per the NXP/Freescale datasheet, the device supports broadband performance across the full 1930-1990 MHz PCS/UMTS band without retuning.
Architecturally, the MRF5S19060MR1 uses a single-stage common-source LDMOS die with on-drain feed; the WB-4 package exposes the drain on the flange while the gate and source are brought out as bond-wire leads. This pinout is the de-facto standard for the MRF5S family and the entire high-power LDMOS cellular PA market, allowing drop-in substitution within the family while differing datasheet waveform ratings distinguish individual parts.
Typical applications include 2 G/3 G cellular base-station driver and final stages, WCDMA/UMTS power amplifiers, PCS repeater outputs, and broadband industrial RF heating. Designers evaluating a single part for entire PA line-ups usually prefer this family because all MRF5S19060 variants share identical matching networks and bias sequencing.
For thermal design at 12 W average continuous CW power, a copper spreader that holds case temperature below 100 degrees C is required; the part is not designed for unlimited heatsink-less operation. The MRF5S19060MR1 pinout matches MRF5S19060MBR1 (Class AB vs Class B) and is footprint-identical to other MRF5S WB-4 devices, which simplifies radio maintenance and second-source planning.
This page synthesizes distributor pricing, pinout, drop-in alternatives within the MRF5S family, and RF design notes that are not assembled in the manufacturer datasheet, supporting faster replacement and BOM decisions.
Drop-in-Alternativen für MRF5S19060MR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF5S19060MR1 (gleiche Bauform und Footprint) – abweichend in Transistor Type, Package, Output Power (Average), Configuration, Frequency Band.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF5S19060MBR1
✅ Drop-In✓ Auf Lager
$16.4 / Stück
Datenblatt ansehen →MRF5S19060NR1
✅ Drop-In✓ Auf Lager
$17.95 / Stück
Datenblatt ansehen →MRF5S19060NBR1
✅ Drop-In✓ Auf Lager
$25.4 / Stück
Datenblatt ansehen →MRF5S18060MR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF5S19150MR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF5S19060MR1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP (formerly Freescale Semiconductor) |
| Part Number | MRF5S19060MR1 |
| Transistortyp | N-Channel LDMOS RF Power MOSFET |
| Frequency Range | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (Vdss) | 65 V (max) |
| Drain Current (Id) | 750 mA |
| Output Power (Pout, avg) | 12 W (N-CDMA) |
| Output Power (Pout, PEP) | 60 W (typical) |
| Power Gain (Gps) | 14 dB (typical) |
| Drain Efficiency (etaD) | 45% (typical) |
| Operating Voltage | 28 V |
| Gehäuse | TO-270 WB-4 (Ceramic) |
| Montageart | Surface Mount / Flange Mount |
| Test Signal | 2 x N-CDMA |
| Operating Class | Class AB |
MRF5S19060MR1 Pin-Konfiguration
| Pin 1 | Gate — RF input gate (bond-wire pad 1) |
| Pin 2 | Gate — RF input gate (bond-wire pad 2, paralleled internally) |
| Pin 3 | Source — Source bond-wire pad (grounded externally) |
| Pin 4 | Source — Source bond-wire pad (grounded externally) |
| Pin Flange | Drain — Drain connection on ceramic flange mounting surface |
Sicherer Arbeitsbereich (DC, pulsed, and CW)
Typische Anwendungen
MRF5S19060MR1 ist geeignet für 6 Anwendungs: PCS Base Station Power Amplifier Final Stage, WCDMA/UMTS Macro-Cell Driver Stage, PCS Repeater and Booster Output, Industrial RF Heating and Plasma Drive, Public-Safety and PHS 1900 Band PAs, N-CDMA Reference Design and Evaluation Platform.
PCS Base Station Power Amplifier Final Stage
The MRF5S19060MR1 is built for 1930-1990 MHz PCS base-station PAs where 12 W average N-CDMA output at 14 dB gain is required. Its 45 percent drain efficiency at the rated condition reduces heat-sink burden versus competing parts and its broadband internal input match accepts full-band operation without retuning. Designers place the device in a class-AB common-source final stage with 28 V drain feed, low-loss microstrip output matching, and harmonic stubs at 2fo and 3fo.
Empfohlen
WCDMA/UMTS Macro-Cell Driver Stage
In WCDMA/UMTS macro-cell radios the MRF5S19060MR1 frequently appears as a driver following a lower-power pre-driver and ahead of a higher-power final. Its 14 dB gain at 1930-1990 MHz provides the boost needed to drive 30-60 W finals while maintaining acceptable ACPR linearity for 3 G signals. Per Freescale reference designs, Idq is set near 100 mA for class-AB linearity and the device is operated from a 28 V regulated rail with sequencing to avoid back-driven damage.
Empfohlen
PCS Repeater and Booster Output
Repeater and booster designs operating in the 1930-1990 MHz downlink band benefit from the MRF5S19060MR1's broadband response, eliminating band-select switches and reducing BOM cost. At 12 W continuous average the device drives coverage antennas for indoor boosters and small-cell repeaters where weight and thermal load are tight constraints. Quiescent bias is reduced to ~50 mA for improved efficiency in always-on repeater installations.
Empfohlen
Industrial RF Heating and Plasma Drive
Industrial RF heating and plasma generators use the 1930-1990 MHz ISM-adjacent band for material processing. The MRF5S19060MR1's 60 W PEP capability makes it suitable as a final or driver for 1.9 GHz plasma sources, where the LDMOS ruggedness delivers reliable operation into mismatched loads. Thermal design follows class-A continuous-duty ratings with forced-air cooling at 12 W average, with case temperature held below 100 degrees C.
Empfohlen
Public-Safety and PHS 1900 Band PAs
Although optimized for 1930-1990 MHz, the MRF5S19060MR1 also covers the lower edge of the 1900 MHz PHS band with modest derating, letting public-safety and PHS base-station OEMs consolidate SKUs. Class-AB linearity supports QPSK and pi/4-DQPSK waveforms used in legacy 1.9 GHz Japanese cordless systems. Designers should evaluate ACPR on the target waveform before committing to a single part across multiple bands.
Empfohlen
N-CDMA Reference Design and Evaluation Platform
Freescale and NXP publish an MRF5S19060MR1 reference design on RO4350B 30 mil substrate that demonstrates 12 W average N-CDMA at 45 percent efficiency with ACPR below -47 dBc. Designers adapting this for in-house test platforms reuse the input/output microstrip networks and bias sequencing with confidence because the part's internal match is broadband. The eval board also serves as a fixture reference for second-source qualification of alternative NXP MRF5S-family parts.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF5S19060MR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF5S19060MBR1 | MRF5S19060NR1 | MRF5S19060NBR1 | MRF5S18060MR1 | MRF5S19150MR1 |
|---|---|---|---|---|---|---|
| Package | TO-270 WB-4 | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1805-1880 MHz | 1930-1990 MHz |
| Output Power (Pavg) | 12 W | 12 W | 12 W | 12 W | 12 W | 15 W |
| Operating Class | Class AB | Class B | Class AB | Class B | Class AB | Class AB |
| Power Gain | 14 dB | 14 dB | 14 dB | 14 dB | 14 dB | 13 dB |
| Drain Efficiency | 45 % | ~50 % (Class B) | 45 % | ~50 % (Class B) | 45 % | 45 % |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Test Signal | 2 x N-CDMA | 2 x N-CDMA | 2 x N-CDMA | 2 x N-CDMA | 2 x N-CDMA | 2 x N-CDMA |
Wichtigste Unterscheidungsmerkmale
- Class-AB optimized for 2 x N-CDMA linearity (vs. MRF5S19060MBR1)
- Exact 1930-1990 MHz band match vs 1805-1880 MHz (vs. MRF5S18060MR1)
- 12 W average rating on lighter heatsink vs 15 W part (vs. MRF5S19150MR1)
Designhinweise
Estimated: at 12 W average N-CDMA output with ~45 percent drain efficiency, the MRF5S19060MR1 dissipates approximately 16 W through the drain. With a typical junction-to-case thermal resistance of 0.7 C/W and a 100 degrees C case target, the flange must be mounted to a heatsink with total thermal resistance (case-to-ambient plus thermal interface material) of 4-6 C/W. Forced-air cooling is required above 8 W average continuous CW to maintain reliability. Apply thermal grease or a graphite thermal pad with 0.1-0.3 C/W resistance.
Per Freescale reference designs the MRF5S19060MR1 is mounted on RO4350B 30 mil substrate with the source leads grounded via low-inductance bond wires or direct via arrays. Keep RF input traces short, use 50 ohm microstrip on the gate side, and place harmonic stubs at 2fo and 3fo distances of lambda/8 from the drain pad. Decouple the 28 V drain feed with a 1000 pF chip cap plus a 10 uF tantalum plus a 0.1 uF bypass for VHF stability.
Exceeding Vds of 65 V during load-pull transients can permanently damage the LDMOS die - always add a drain-voltage clamp and gate-bias sequencing (turn on negative gate bias first, then ramp drain voltage, then drive RF). Do not operate without RF drive in class AB with Idq above 200 mA for extended periods because quiescent dissipation is large. Do not apply RF drive before the drain voltage is settled. Avoid reverse bias on the gate beyond -10 V which can puncture the gate oxide.
Compliance-Informationen
RoHS/REACH compliance not explicitly listed in verified web data; TO-270 ceramic packages historically use lead-bearing die attach. AEC-Q100 not applicable - this is an RF power semiconductor, not automotive qualified. Confirm lead-free status on the NXP product page before specifying for RoHS-bound designs.
