MRF5S9101NR1 vs MRF5S4140HR3 Vergleich
Detaillierter Direktvergleich von MRF5S9101NR1 von NXP Semiconductors und MRF5S4140HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
MRF5S9101NR1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | MRF5S9101NR1 | MRF5S4140HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF5S9101NR1 | — |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Application | GSM / GSM EDGE base station PAs, 869–960 MHz | Single N-CDMA base station PA, 450 MHz band |
| Frequency Range | 869 MHz to 960 MHz | — |
| Test Frequency | 960 MHz | 465 MHz |
| Output Power (P1dB) | 100 W (typ) | — |
| Power Gain | 17.5 dB (typ at 960 MHz, 26 V, 700 mA) | 21 dB at 465 MHz |
| Drain Supply Voltage (Vdd) | 26 V (nominal), 28 V (max operating) | — |
| Drain Breakdown Voltage (Vdss) | 68 V | — |
| Quiescent Current (Idq) | 700 mA | — |
| Drain Current (Test) | 700 mA | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Junction Temperature (Max) | 200 °C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Gehäuse / Bauform | TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold | — |
| Montageart | Surface / Flange Mount (through-board thermal pad) | — |
| Lead-Free / RoHS | Lead-free (N suffix indicates lead-free transition) | — |
| Thermal Resistance (junction-to-case) | [DATA_NEEDED: theta_JC] | — |
| Frequency Band | — | 400-500 MHz |
| Typical Output Power | — | 28 W avg. |
| Operating Drain Voltage | — | 28 V typical |
| Drain-Source Voltage (Max) | — | 65 V |
| DC Bias Current (Id) | — | 1.25 A typical |
| Configuration | — | Single, common-source |
| Maximum Power Dissipation | — | 427 W absolute (per partstack profile) |
| Gehäuse | — | NI-780H-2L (ceramic flange mount) |
| Montagestil | — | Flange mount, surface-mount leads |
| Input Matching | — | Internal, broadband |
| Operating Mode | — | Class AB, large-signal |
| RoHS-Status | — | [DATA_NEEDED: explicit RoHS status not in web data] |
| Lead-Free | — | [DATA_NEEDED: lead-free status not in web data] |