MRF5S9101NR1 vs MRF5S4140HR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF5S9101NR1 sa pamamagitan ng NXP Semiconductors at MRF5S4140HR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
MRF5S9101NR1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | MRF5S9101NR1 | MRF5S4140HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF5S9101NR1 | — |
| Uri ng Transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Application | GSM / GSM EDGE base station PAs, 869–960 MHz | Single N-CDMA base station PA, 450 MHz band |
| Frequency Range | 869 MHz to 960 MHz | — |
| Test Frequency | 960 MHz | 465 MHz |
| Output Power (P1dB) | 100 W (typ) | — |
| Power Gain | 17.5 dB (typ at 960 MHz, 26 V, 700 mA) | 21 dB at 465 MHz |
| Drain Supply Voltage (Vdd) | 26 V (nominal), 28 V (max operating) | — |
| Drain Breakdown Voltage (Vdss) | 68 V | — |
| Quiescent Current (Idq) | 700 mA | — |
| Drain Current (Test) | 700 mA | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Junction Temperature (Max) | 200 °C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Packhaging / Kaso | TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold | — |
| Uri ng Pagpapasok | Surface / Flange Mount (through-board thermal pad) | — |
| Lead-Free / RoHS | Lead-free (N suffix indicates lead-free transition) | — |
| Thermal Resistance (junction-to-case) | [DATA_NEEDED: theta_JC] | — |
| Frequency Band | — | 400-500 MHz |
| Typical Output Power | — | 28 W avg. |
| Operating Drain Voltage | — | 28 V typical |
| Drain-Source Voltage (Max) | — | 65 V |
| DC Bias Current (Id) | — | 1.25 A typical |
| Configuration | — | Single, common-source |
| Maximum Power Dissipation | — | 427 W absolute (per partstack profile) |
| Packhaging | — | NI-780H-2L (ceramic flange mount) |
| Style ng Pagpapasok | — | Flange mount, surface-mount leads |
| Input Matching | — | Internal, broadband |
| Operating Mode | — | Class AB, large-signal |
| Tindminan RoHS | — | [DATA_NEEDED: explicit RoHS status not in web data] |
| Lead-Free | — | [DATA_NEEDED: lead-free status not in web data] |