MRF5S9101NR1 vs MRF5S4140HR3 तुलना
विस्तृत दोनों ओर की तुलना MRF5S9101NR1 द्वारा NXP Semiconductors और MRF5S4140HR3 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
MRF5S9101NR1 ✓ सक्रिय
विशेषता तुलना
| पैरामीटर | MRF5S9101NR1 | MRF5S4140HR3 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF5S9101NR1 | — |
| ट्रांज़िस्टर प्रकार | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Application | GSM / GSM EDGE base station PAs, 869–960 MHz | Single N-CDMA base station PA, 450 MHz band |
| Frequency Range | 869 MHz to 960 MHz | — |
| Test Frequency | 960 MHz | 465 MHz |
| Output Power (P1dB) | 100 W (typ) | — |
| Power Gain | 17.5 dB (typ at 960 MHz, 26 V, 700 mA) | 21 dB at 465 MHz |
| Drain Supply Voltage (Vdd) | 26 V (nominal), 28 V (max operating) | — |
| Drain Breakdown Voltage (Vdss) | 68 V | — |
| Quiescent Current (Idq) | 700 mA | — |
| Drain Current (Test) | 700 mA | — |
| ऑपरेटिंग तापमान रेंज | [DATA_NEEDED: operating temperature range] | — |
| Junction Temperature (Max) | 200 °C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| पैकेज / केस | TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold | — |
| माउंटिंग प्रकार | Surface / Flange Mount (through-board thermal pad) | — |
| Lead-Free / RoHS | Lead-free (N suffix indicates lead-free transition) | — |
| Thermal Resistance (junction-to-case) | [DATA_NEEDED: theta_JC] | — |
| Frequency Band | — | 400-500 MHz |
| Typical Output Power | — | 28 W avg. |
| Operating Drain Voltage | — | 28 V typical |
| Drain-Source Voltage (Max) | — | 65 V |
| DC Bias Current (Id) | — | 1.25 A typical |
| Configuration | — | Single, common-source |
| Maximum Power Dissipation | — | 427 W absolute (per partstack profile) |
| पैकेज | — | NI-780H-2L (ceramic flange mount) |
| माउंटिंग स्टाइल | — | Flange mount, surface-mount leads |
| Input Matching | — | Internal, broadband |
| Operating Mode | — | Class AB, large-signal |
| RoHS स्थिति | — | [DATA_NEEDED: explicit RoHS status not in web data] |
| Lead-Free | — | [DATA_NEEDED: lead-free status not in web data] |