MRF5S9101NR1 vs MRF5S4140HR3 Comparaison
Comparaison détaillée côte à côte de MRF5S9101NR1 par NXP Semiconductors et MRF5S4140HR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
MRF5S9101NR1 ✓ Actif
Comparaison des spécifications
| Paramètre | MRF5S9101NR1 | MRF5S4140HR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF5S9101NR1 | — |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Application | GSM / GSM EDGE base station PAs, 869–960 MHz | Single N-CDMA base station PA, 450 MHz band |
| Frequency Range | 869 MHz to 960 MHz | — |
| Test Frequency | 960 MHz | 465 MHz |
| Output Power (P1dB) | 100 W (typ) | — |
| Power Gain | 17.5 dB (typ at 960 MHz, 26 V, 700 mA) | 21 dB at 465 MHz |
| Drain Supply Voltage (Vdd) | 26 V (nominal), 28 V (max operating) | — |
| Drain Breakdown Voltage (Vdss) | 68 V | — |
| Quiescent Current (Idq) | 700 mA | — |
| Drain Current (Test) | 700 mA | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Junction Temperature (Max) | 200 °C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Boîtier / Format | TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold | — |
| Type de montage | Surface / Flange Mount (through-board thermal pad) | — |
| Lead-Free / RoHS | Lead-free (N suffix indicates lead-free transition) | — |
| Thermal Resistance (junction-to-case) | [DATA_NEEDED: theta_JC] | — |
| Frequency Band | — | 400-500 MHz |
| Typical Output Power | — | 28 W avg. |
| Operating Drain Voltage | — | 28 V typical |
| Drain-Source Voltage (Max) | — | 65 V |
| DC Bias Current (Id) | — | 1.25 A typical |
| Configuration | — | Single, common-source |
| Maximum Power Dissipation | — | 427 W absolute (per partstack profile) |
| Boîtier | — | NI-780H-2L (ceramic flange mount) |
| Style de montage | — | Flange mount, surface-mount leads |
| Input Matching | — | Internal, broadband |
| Operating Mode | — | Class AB, large-signal |
| Statut RoHS | — | [DATA_NEEDED: explicit RoHS status not in web data] |
| Lead-Free | — | [DATA_NEEDED: lead-free status not in web data] |