MRF5S9101NR1 vs MRF5S4140HR3 Comparación
Comparación detallada lado a lado de MRF5S9101NR1 por NXP Semiconductors y MRF5S4140HR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
MRF5S9101NR1 ✓ Activo
Comparación de especificaciones
| Parámetro | MRF5S9101NR1 | MRF5S4140HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF5S9101NR1 | — |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Application | GSM / GSM EDGE base station PAs, 869–960 MHz | Single N-CDMA base station PA, 450 MHz band |
| Frequency Range | 869 MHz to 960 MHz | — |
| Test Frequency | 960 MHz | 465 MHz |
| Output Power (P1dB) | 100 W (typ) | — |
| Power Gain | 17.5 dB (typ at 960 MHz, 26 V, 700 mA) | 21 dB at 465 MHz |
| Drain Supply Voltage (Vdd) | 26 V (nominal), 28 V (max operating) | — |
| Drain Breakdown Voltage (Vdss) | 68 V | — |
| Quiescent Current (Idq) | 700 mA | — |
| Drain Current (Test) | 700 mA | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Junction Temperature (Max) | 200 °C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Encapsulado / Carcasa | TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold | — |
| Tipo de montaje | Surface / Flange Mount (through-board thermal pad) | — |
| Lead-Free / RoHS | Lead-free (N suffix indicates lead-free transition) | — |
| Thermal Resistance (junction-to-case) | [DATA_NEEDED: theta_JC] | — |
| Frequency Band | — | 400-500 MHz |
| Typical Output Power | — | 28 W avg. |
| Operating Drain Voltage | — | 28 V typical |
| Drain-Source Voltage (Max) | — | 65 V |
| DC Bias Current (Id) | — | 1.25 A typical |
| Configuration | — | Single, common-source |
| Maximum Power Dissipation | — | 427 W absolute (per partstack profile) |
| Encapsulado | — | NI-780H-2L (ceramic flange mount) |
| Estilo de montaje | — | Flange mount, surface-mount leads |
| Input Matching | — | Internal, broadband |
| Operating Mode | — | Class AB, large-signal |
| Estado RoHS | — | [DATA_NEEDED: explicit RoHS status not in web data] |
| Lead-Free | — | [DATA_NEEDED: lead-free status not in web data] |