MRF6V14300HR5 vs MRF6V14300HSR5 Vergleich

Detaillierter Direktvergleich von MRF6V14300HR5 von NXP Semiconductors und MRF6V14300HSR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6V14300HR5 MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP

MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP

MRF6V14300HR5 ✓ Aktiv
NXP Semiconductors
MRF6V14300HSR5 MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP

MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP

MRF6V14300HSR5 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6V14300HR5 MRF6V14300HSR5
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $184,20 $162,00
Manufacturer NXP Semiconductors (formerly Freescale) —
Transistortyp N-Channel Lateral RF Power MOSFET (LDMOS-family) LDMOS, N-Channel, RF Power
Gehäuse / Bauform NI-780H-2L (push-pull ceramic flange) —
Drain-Source Voltage (Vdss) 50 V —
Drain Current (Id) 150 mA (typical pulsed bias) —
Operating Frequency 1.4 GHz (characterized 1200-1400 MHz) —
Output Power (Pout) 330 W pulsed —
Power Gain (Gps) 18 dB typical —
Duty Cycle 1% to 12% 1% to 12% (pulsed)
Configuration Single, push-pull —
Channel Type N-Channel enhancement mode —
Number of Elements 1 —
Peak Reflow Temperature 260 C (max 40 s) —
Maximum Operating Temperature 225 C —
RoHS-Status [DATA_NEEDED: RoHS status] Compliant
Montageart Chassis / screw-mount (NI-780H ceramic flange) Surface Mount / Flange Mount
Technology — Lateral N-Channel MOSFET (LDMOS)
Family — VHV6 (Very High Voltage, 6th generation)
Drain-Source Voltage (Vds) Rated — 100 V
Operating Drain Voltage (Test) — 50 V
Operating Frequency Range — 1200 MHz to 1400 MHz
Typical Test Frequency — 1.4 GHz
Peak Output Power — 330 W (pulsed)
Typical Power Gain — 18 dB at 1.4 GHz
Quiescent Current (Idq) — 150 mA
Gehäuse — NI-780S (SOT1793), 3-pin ceramic
Lead Free Status — Lead Free (per NXP product page)

Datenblätter & Ressourcen

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