MRF6V14300HR5 vs MRF6V14300HSR5 비교
다음의 상세 나란히 비교: MRF6V14300HR5 제조: NXP Semiconductors 및 MRF6V14300HSR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP
MRF6V14300HSR5 ✓ 활성사양 비교
| 파라미터 | MRF6V14300HR5 | MRF6V14300HSR5 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $184.20 | $162.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| 트랜지스터 유형 | N-Channel Lateral RF Power MOSFET (LDMOS-family) | LDMOS, N-Channel, RF Power |
| 패키지 / 케이스 | NI-780H-2L (push-pull ceramic flange) | — |
| Drain-Source Voltage (Vdss) | 50 V | — |
| Drain Current (Id) | 150 mA (typical pulsed bias) | — |
| Operating Frequency | 1.4 GHz (characterized 1200-1400 MHz) | — |
| Output Power (Pout) | 330 W pulsed | — |
| Power Gain (Gps) | 18 dB typical | — |
| Duty Cycle | 1% to 12% | 1% to 12% (pulsed) |
| Configuration | Single, push-pull | — |
| Channel Type | N-Channel enhancement mode | — |
| Number of Elements | 1 | — |
| Peak Reflow Temperature | 260 C (max 40 s) | — |
| Maximum Operating Temperature | 225 C | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | Compliant |
| 실장 유형 | Chassis / screw-mount (NI-780H ceramic flange) | Surface Mount / Flange Mount |
| Technology | — | Lateral N-Channel MOSFET (LDMOS) |
| Family | — | VHV6 (Very High Voltage, 6th generation) |
| Drain-Source Voltage (Vds) Rated | — | 100 V |
| Operating Drain Voltage (Test) | — | 50 V |
| Operating Frequency Range | — | 1200 MHz to 1400 MHz |
| Typical Test Frequency | — | 1.4 GHz |
| Peak Output Power | — | 330 W (pulsed) |
| Typical Power Gain | — | 18 dB at 1.4 GHz |
| Quiescent Current (Idq) | — | 150 mA |
| 패키지 | — | NI-780S (SOT1793), 3-pin ceramic |
| Lead Free Status | — | Lead Free (per NXP product page) |