MRF6V14300HR5 vs MRF6V14300HSR5 Comparación
Comparación detallada lado a lado de MRF6V14300HR5 por NXP Semiconductors y MRF6V14300HSR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP
MRF6V14300HSR5 ✓ ActivoComparación de especificaciones
| Parámetro | MRF6V14300HR5 | MRF6V14300HSR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $184,20 | $162,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Tipo de transistor | N-Channel Lateral RF Power MOSFET (LDMOS-family) | LDMOS, N-Channel, RF Power |
| Encapsulado / Carcasa | NI-780H-2L (push-pull ceramic flange) | — |
| Drain-Source Voltage (Vdss) | 50 V | — |
| Drain Current (Id) | 150 mA (typical pulsed bias) | — |
| Operating Frequency | 1.4 GHz (characterized 1200-1400 MHz) | — |
| Output Power (Pout) | 330 W pulsed | — |
| Power Gain (Gps) | 18 dB typical | — |
| Duty Cycle | 1% to 12% | 1% to 12% (pulsed) |
| Configuration | Single, push-pull | — |
| Channel Type | N-Channel enhancement mode | — |
| Number of Elements | 1 | — |
| Peak Reflow Temperature | 260 C (max 40 s) | — |
| Maximum Operating Temperature | 225 C | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Tipo de montaje | Chassis / screw-mount (NI-780H ceramic flange) | Surface Mount / Flange Mount |
| Technology | — | Lateral N-Channel MOSFET (LDMOS) |
| Family | — | VHV6 (Very High Voltage, 6th generation) |
| Drain-Source Voltage (Vds) Rated | — | 100 V |
| Operating Drain Voltage (Test) | — | 50 V |
| Operating Frequency Range | — | 1200 MHz to 1400 MHz |
| Typical Test Frequency | — | 1.4 GHz |
| Peak Output Power | — | 330 W (pulsed) |
| Typical Power Gain | — | 18 dB at 1.4 GHz |
| Quiescent Current (Idq) | — | 150 mA |
| Encapsulado | — | NI-780S (SOT1793), 3-pin ceramic |
| Lead Free Status | — | Lead Free (per NXP product page) |