MRF6V14300HR5 vs MRF6V14300HSR5 对比

详细并排对比 MRF6V14300HR5 出自 NXP Semiconductors 和 MRF6V14300HSR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6V14300HR5 MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP

MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP

MRF6V14300HR5 ✓ 量产中
NXP Semiconductors
MRF6V14300HSR5 MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP

MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP

MRF6V14300HSR5 ✓ 量产中

规格对比

参数 MRF6V14300HR5 MRF6V14300HSR5
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $184.20 $162.00
Manufacturer NXP Semiconductors (formerly Freescale) —
晶体管类型 N-Channel Lateral RF Power MOSFET (LDMOS-family) LDMOS, N-Channel, RF Power
封装 / 外壳 NI-780H-2L (push-pull ceramic flange) —
Drain-Source Voltage (Vdss) 50 V —
Drain Current (Id) 150 mA (typical pulsed bias) —
Operating Frequency 1.4 GHz (characterized 1200-1400 MHz) —
Output Power (Pout) 330 W pulsed —
Power Gain (Gps) 18 dB typical —
Duty Cycle 1% to 12% 1% to 12% (pulsed)
Configuration Single, push-pull —
Channel Type N-Channel enhancement mode —
Number of Elements 1 —
Peak Reflow Temperature 260 C (max 40 s) —
Maximum Operating Temperature 225 C —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
安装类型 Chassis / screw-mount (NI-780H ceramic flange) Surface Mount / Flange Mount
Technology — Lateral N-Channel MOSFET (LDMOS)
Family — VHV6 (Very High Voltage, 6th generation)
Drain-Source Voltage (Vds) Rated — 100 V
Operating Drain Voltage (Test) — 50 V
Operating Frequency Range — 1200 MHz to 1400 MHz
Typical Test Frequency — 1.4 GHz
Peak Output Power — 330 W (pulsed)
Typical Power Gain — 18 dB at 1.4 GHz
Quiescent Current (Idq) — 150 mA
封装 — NI-780S (SOT1793), 3-pin ceramic
Lead Free Status — Lead Free (per NXP product page)

数据手册与资源

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