MRF6V14300HR5 vs MRF6V14300HSR5 Comparaison
Comparaison détaillée côte à côte de MRF6V14300HR5 par NXP Semiconductors et MRF6V14300HSR5 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP
MRF6V14300HSR5 ✓ ActifComparaison des spécifications
| Paramètre | MRF6V14300HR5 | MRF6V14300HSR5 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $184,20 | $162,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Type de transistor | N-Channel Lateral RF Power MOSFET (LDMOS-family) | LDMOS, N-Channel, RF Power |
| Boîtier / Format | NI-780H-2L (push-pull ceramic flange) | — |
| Drain-Source Voltage (Vdss) | 50 V | — |
| Drain Current (Id) | 150 mA (typical pulsed bias) | — |
| Operating Frequency | 1.4 GHz (characterized 1200-1400 MHz) | — |
| Output Power (Pout) | 330 W pulsed | — |
| Power Gain (Gps) | 18 dB typical | — |
| Duty Cycle | 1% to 12% | 1% to 12% (pulsed) |
| Configuration | Single, push-pull | — |
| Channel Type | N-Channel enhancement mode | — |
| Number of Elements | 1 | — |
| Peak Reflow Temperature | 260 C (max 40 s) | — |
| Maximum Operating Temperature | 225 C | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Type de montage | Chassis / screw-mount (NI-780H ceramic flange) | Surface Mount / Flange Mount |
| Technology | — | Lateral N-Channel MOSFET (LDMOS) |
| Family | — | VHV6 (Very High Voltage, 6th generation) |
| Drain-Source Voltage (Vds) Rated | — | 100 V |
| Operating Drain Voltage (Test) | — | 50 V |
| Operating Frequency Range | — | 1200 MHz to 1400 MHz |
| Typical Test Frequency | — | 1.4 GHz |
| Peak Output Power | — | 330 W (pulsed) |
| Typical Power Gain | — | 18 dB at 1.4 GHz |
| Quiescent Current (Idq) | — | 150 mA |
| Boîtier | — | NI-780S (SOT1793), 3-pin ceramic |
| Lead Free Status | — | Lead Free (per NXP product page) |