MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP
Teilenummer: MRF6V3090NR1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $87.5 | $87,50 |
| 10 | $81.2 | $812,00 |
| 100 | $73.8 | $7.380,00 |
| 500 | $66.4 | $33.200,00 |
| 1.000 | $59.9 | $59.900,00 |
MRF6V3090NR1 Übersicht
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized high-power MOSFET optimized for RF amplification in the UHF band. Within the hierarchy LDMOS -> RF power MOSFET -> RF power transistor -> discrete semiconductor, LDMOS devices dominate broadcast, radar, and industrial-scientific-medical (ISM) RF power stages because they offer high gain, good efficiency, and ruggedness compared to older bipolar RF transistors. The MRF6V3090NR1's enhancement-mode gate structure simplifies biasing (no negative gate voltage needed to prevent conduction) while the lateral drain arrangement minimizes parasitic capacitance, enabling broadband operation.
Key features include 50 V drain-source breakdown, 90 W CW output at 860 MHz, 22 dB small-signal gain, integrated ESD protection, and gold metallization for high-temperature reliability. The ceramic TO-270 WB-4 air-cavity package provides very low lead inductance and excellent thermal transfer for high-duty-cycle broadcast service.
Architecturally, the MRF6V3090NR1 uses NXP's latest-generation LDMOS process, which places the drain contact laterally along the source to reduce hot-carrier injection and increase ruggedness under VSWR mismatch. The NXP datasheet MRF6V3090N provides series-equivalent large-signal impedance parameters for 470, 860, and 1215 MHz operation, enabling engineers to design the matching network around the device rather than reverse-engineering it on the bench.
Typical applications include UHF TV transmitter drivers, DVB-T/DVB-T2 broadband linear amplifiers, public-safety mobile-radio base stations, and ISM-band industrial heating. Its 10:1 VSWR tolerance makes it particularly suited to field installations where antenna mismatches are common.
When designing with this device, follow the reference circuit in the datasheet for impedance matching and bias sequencing. The TO-270 WB-4 package requires a bolted heatsink with proper torque, and the gate voltage must be sequenced before the drain voltage for safe hot-switching protection.
This page synthesizes distributor pricing, drop-in NXP-family alternatives, and broadcast RF design guidance not consolidated in the manufacturer datasheet.
Drop-in-Alternativen für MRF6V3090NR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6V3090NR1 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Transistor Type, Test Frequency, VSWR Tolerance.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF6V3090NR5
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6V3090NBR1
✅ Drop-In✓ Auf Lager
$44.5 / Stück
Datenblatt ansehen →MRF6V3090NBR5
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6VP3091NR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6V4300NBR5
✅ Drop-In✓ Auf Lager
$125 / Stück
Datenblatt ansehen →MRF6V3090NR1 Grenzwerte & elektrische Eigenschaften
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (VDS) | 50 V |
| Continuous Drain Current (ID) | 350 mA |
| Frequency Range | 470 MHz to 1215 MHz |
| Test Frequency | 860 MHz |
| Output Power (CW, Pout) | 90 W |
| Power Gain (typical) | 22 dB at 860 MHz |
| VSWR Tolerance | 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW |
| Package Type | TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) |
| Montageart | Surface Mount / Flange Mount with bolt-down heatsink |
| Betriebs-Sperrschichttemperatur | -40C to +200C (max TJ) |
| Reel Quantity (R1 suffix) | 500 per reel (R1 = 500 unit reel) |
MRF6V3090NR1 Pin-Konfiguration
| Pin 1 | GATE1 — Gate input (parallel lead 1) |
| Pin 2 | GATE2 — Gate input (parallel lead 2) |
| Pin 3 | DRAIN1 — Drain output (parallel lead 1) |
| Pin 4 | DRAIN2 — Drain output (parallel lead 2) |
| Pin FLANGE | SOURCE — Source (flange / mounting bolts - electrical and thermal common) |
Sicherer Arbeitsbereich - DC
Typische Anwendungen
MRF6V3090NR1 ist geeignet für 6 Anwendungs: UHF TV Transmitter Driver Stage, DVB-T/DVB-T2 Broadband Linear Amplifier, Public Safety / Mobile Radio Base Station PA, Industrial-Scientific-Medical (ISM) 915 MHz Power Amplifier, L-Band Avionics Transponder Driver (950-1215 MHz), UHF Digital TV Repeater / Gap-Filler Transmitter.
UHF TV Transmitter Driver Stage
The MRF6V3090NR1 fits UHF TV transmitter driver stages in the 470-860 MHz DVB-T/DVB-T2 broadcast band where 90 W CW output at 22 dB gain and 50 V drain bias directly feeds the final power amplifier. Per the NXP datasheet MRF6V3090N, the device's 10:1 VSWR tolerance across all phase angles protects the driver stage when the final-stage output network is being tuned or when the antenna feed encounters mismatch. The ceramic TO-270 WB-4 air-cavity package supports the continuous 24/7 broadcast duty cycle required by regulated UHF TV transmitters. Pair with NXP MRF6V4300 series for the final amplifier when higher output power is needed.
Empfohlen
DVB-T/DVB-T2 Broadband Linear Amplifier
The MRF6V3090NR1's 470-1215 MHz frequency coverage and 22 dB gain make it a strong fit for broadband linear amplifiers in DVB-T and DVB-T2 OFDM transmitters, where the high PAPR of OFDM waveforms demands LDMOS linearity and ruggedness. Per the NXP datasheet MRF6V3090N, large-signal impedance parameters are characterized at 470, 860, and 1215 MHz reference points - giving design engineers a direct starting point for the output matching network that flattens gain across the UHF broadcast band. The 90 W CW rating supports both single-channel and multi-channel combining amplifier architectures.
Empfohlen
Public Safety / Mobile Radio Base Station PA
The MRF6V3090NR1 delivers 90 W CW at 860 MHz with 22 dB gain, which fits public-safety and land-mobile-radio (LMR) base-station power amplifier stages operating in the 700/800 MHz bands (covered by the 470-1215 MHz device bandwidth). Per the NXP datasheet MRF6V3090N, the 10:1 VSWR tolerance ensures survival when the shared antenna system encounters tower-top mismatch, lightning-induced mismatch, or duplexer retune. The ceramic air-cavity package provides the thermal margin for continuous-duty base-station service. Engineers often pair this part with a small-signal pre-driver MRF9045 or similar LDMOS gain stage.
Empfohlen
Industrial-Scientific-Medical (ISM) 915 MHz Power Amplifier
The MRF6V3090NR1 covers the 915 MHz ISM band within its 470-1215 MHz operating range, supporting 90 W CW output for industrial heating, drying, plastic welding, and RF plasma generation systems where the 902-928 MHz ISM allocation permits higher power than unlicensed Wi-Fi. Per the NXP datasheet MRF6V3090N, the 22 dB gain at 860 MHz extrapolates reasonably into the 915 MHz region with minor matching network adjustment. The TO-270 WB-4 flange mount simplifies integration into the heavy heatsinks typical of industrial RF generators. The 10:1 VSWR rating is essential in industrial environments where the work coil is a moving, mismatched load.
Empfohlen
L-Band Avionics Transponder Driver (950-1215 MHz)
The MRF6V3090NR1 covers the 950-1215 MHz L-band used by Mode S transponders, DME interrogators, and ADS-B out transmitters in commercial aerospace applications. Per the NXP datasheet MRF6V3090N, large-signal impedance parameters are provided at 1215 MHz, giving avionics RF designers a known-good starting point for transponder final-stage matching. The 90 W CW rating supports pulsed-mode operation at higher instantaneous power for transponder interrogation pulses - a common use of CW-rated LDMOS in avionics. For pure-avionics variants see NXP's MRF6VP3091NR1 (P-suffix avionics grade).
Empfohlen
UHF Digital TV Repeater / Gap-Filler Transmitter
The MRF6V3090NR1 fits digital TV repeater and gap-filler transmitters that receive an off-air DVB-T signal and retransmit it on the same or adjacent channel to fill coverage holes in mountainous terrain or urban canyons. Per the NXP datasheet MRF6V3090N, the 90 W CW output and broadband 470-860 MHz response enable single-device PA stages for low-to-medium-power gap fillers, eliminating the need for combined amplifier chains. The flange-mount ceramic package allows field-replaceable assembly in outdoor repeater enclosures where maintenance access is limited. Use the NBR1 (narrower-band) variant when operating on a single fixed channel for better efficiency.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6V3090NR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6V3090NR5 | MRF6V3090NBR1 | MRF6V3090NBR5 | MRF6VP3091NR1 | MRF6V4300NBR5 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270 WB-4 | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 family - same |
| Drain-Source Voltage | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Reel Quantity | 500 (R1) | 50 (R5) | 500 (R1) | 50 (R5) | 500 (R1) | 50 (R5) |
Wichtigste Unterscheidungsmerkmale
- 90 W CW at 860 MHz with 22 dB gain - broadband across 470-1215 MHz (vs. MRF6V3090NBR1)
- Same TO-270 WB-4 package family as higher-power MRF6V4300 series (vs. MRF6V4300NBR5)
- 10:1 VSWR survivability at full 90 W CW (vs. MRF6VP3091NR1)
Designhinweise
The TO-270 WB-4 ceramic air-cavity package requires a bolted heatsink with proper torque (typically 0.5-0.7 N-m per the NXP application note family for similar parts) and a thin layer of thermal compound such as Wakefield-Vol 128 or Shin-Etsu X23-7921-5. At 90 W CW output with typical 50% drain efficiency, the device dissipates roughly 90 W of heat - requiring a substantial extruded heatsink or cold-plate. Estimated dissipation based on 90 W output / 0.5 efficiency - verify with manufacturer thermal curves before final mechanical design. Junction temperature must stay below 200 C per datasheet absolute maximum.
Design the input and output matching networks on low-loss PCB substrate (Rogers RO4350B or RO4003C recommended for UHF, not FR-4) per the reference circuit in NXP datasheet MRF6V3090N. The gate and drain leads each have two parallel pads - both must be bonded to the matching network with minimal trace length to suppress common-mode inductance. Add DC-blocking capacitors on gate and drain paths and RF chokes to gate and drain bias feeds; the NXP reference circuit shows exact component values for 470/860/1215 MHz.
The flange-mount bolt pattern is the SOURCE connection electrically as well as the thermal path. Use stainless-steel M2 or M2.5 screws with star washers to ensure low-inductance source grounding. Maintain at least 3 mm clearance between the ceramic body and surrounding copper to prevent arcing at 90 W output. Place gate and drain bias feed networks on opposite sides of the device to maximize isolation and prevent positive feedback oscillation, which is a common failure mode for high-gain UHF LDMOS designs.
Always sequence gate voltage ON before drain voltage ON, and drain voltage OFF before gate voltage OFF - the NXP datasheet MRF6V3090N recommends this order to prevent hot-switching damage. Never operate without a 50 V drain supply present; if the drain voltage collapses (e.g., due to a blown fuse upstream), immediately remove the gate bias. Avoid operating at 50 V drain with open drain load - the resulting VSWR can exceed 10:1 and damage the device even with its 10:1 rating. For pulsed applications, verify the duty cycle and pulse width stay within the SOA curve provided in the datasheet.
Compliance-Informationen
Compliance status not explicitly stated in the Verified Web Data. Ceramic-air-cavity RF power packages historically fall under RoHS exemption 7(a) for high-melting-point solders used in the ceramic-to-metal seal. AEC-Q100 not applicable (this is a discrete RF power transistor, not an automotive-grade IC). Engineers must request the latest RoHS/REACH declaration from NXP for binding compliance documentation.
