MRF6VP21KHR5 vs MRF6VP41KHR5 Vergleich

Detaillierter Direktvergleich von MRF6VP21KHR5 von NXP Semiconductors und MRF6VP41KHR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6VP21KHR5 MRF6VP21KHR5 - 1000W VHV6 RF MOSFET, 235MHz, NI-1230 | NXP

MRF6VP21KHR5 - 1000W VHV6 RF MOSFET, 235MHz, NI-1230 | NXP

MRF6VP21KHR5 ✓ Aktiv
NXP Semiconductors
MRF6VP41KHR5 MRF6VP41KHR5 - 1000W 450MHz RF Power MOSFET | NXP

MRF6VP41KHR5 - 1000W 450MHz RF Power MOSFET | NXP

MRF6VP41KHR5 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6VP21KHR5 MRF6VP41KHR5
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $220,00 $229,50
Transistortyp N-Channel Enhancement-Mode RF MOSFET (LDMOS) N-Channel Lateral MOSFET
Technology Laterally Diffused MOS (LDMOS) - VHV6 family MOSFET (Metal-Oxide Semiconductor)
Drain-Source Voltage (Vdss) Max 110 V —
Continuous Drain Current [DATA_NEEDED: continuous drain current Id] —
Pulsed Output Power (Pout) at 235 MHz 1000 W (typical, pulsed) —
Operating Frequency Range Up to 235 MHz —
Power Gain (Gps) at 235 MHz 24 dB (nominal, common-source) —
Test Conditions 50 V supply, pulsed RF service —
Drain Efficiency (Typ) [DATA_NEEDED: drain efficiency %] —
Input/Output Matching Unmatched (discrete matching network required) —
Gehäuse / Bauform NI-1230-4H (5-pin ceramic flange) NI-1230
Montageart Flange mount with screws to heatsink Chassis Mount (flange)
Maximum Operating Temperature 225 °C (package rating) —
Peak Reflow Temperature 260 °C (max 40 s) 260 C
Operating Mode Enhancement mode —
Channel Polarity N-Channel —
RoHS-Status [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS compliance status]
MSL-Level [DATA_NEEDED: MSL rating] —
Manufacturer — NXP Semiconductors
Part Status — Active
Frequency Range — 10 MHz to 500 MHz
Drain-Source Voltage (Vds) — 50 V
Test Frequency — 450 MHz
Output Power (Pout) — 1000 W
Power Gain (Gp) — 20 dB
Drain Current (Id) — 150 mA (operating idle current)
Operating Temperature (Max) — 225 C
Maximum Time at Peak Reflow — 40 s
Configuration — Single

Datenblätter & Ressourcen

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