MRF6VP21KHR5 vs MRF6VP41KHR5 Comparação
Comparação detalhada lado a lado de MRF6VP21KHR5 por NXP Semiconductors e MRF6VP41KHR5 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MRF6VP21KHR5 | MRF6VP41KHR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $220,00 | $229,50 |
| Tipo de transistor | N-Channel Enhancement-Mode RF MOSFET (LDMOS) | N-Channel Lateral MOSFET |
| Technology | Laterally Diffused MOS (LDMOS) - VHV6 family | MOSFET (Metal-Oxide Semiconductor) |
| Drain-Source Voltage (Vdss) Max | 110 V | — |
| Continuous Drain Current | [DATA_NEEDED: continuous drain current Id] | — |
| Pulsed Output Power (Pout) at 235 MHz | 1000 W (typical, pulsed) | — |
| Operating Frequency Range | Up to 235 MHz | — |
| Power Gain (Gps) at 235 MHz | 24 dB (nominal, common-source) | — |
| Test Conditions | 50 V supply, pulsed RF service | — |
| Drain Efficiency (Typ) | [DATA_NEEDED: drain efficiency %] | — |
| Input/Output Matching | Unmatched (discrete matching network required) | — |
| Encapsulamento / Caixa | NI-1230-4H (5-pin ceramic flange) | NI-1230 |
| Tipo de montagem | Flange mount with screws to heatsink | Chassis Mount (flange) |
| Maximum Operating Temperature | 225 °C (package rating) | — |
| Peak Reflow Temperature | 260 °C (max 40 s) | 260 C |
| Operating Mode | Enhancement mode | — |
| Channel Polarity | N-Channel | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS compliance status] |
| Nível MSL | [DATA_NEEDED: MSL rating] | — |
| Manufacturer | — | NXP Semiconductors |
| Part Status | — | Active |
| Frequency Range | — | 10 MHz to 500 MHz |
| Drain-Source Voltage (Vds) | — | 50 V |
| Test Frequency | — | 450 MHz |
| Output Power (Pout) | — | 1000 W |
| Power Gain (Gp) | — | 20 dB |
| Drain Current (Id) | — | 150 mA (operating idle current) |
| Operating Temperature (Max) | — | 225 C |
| Maximum Time at Peak Reflow | — | 40 s |
| Configuration | — | Single |