MRF6VP21KHR5 vs MRF6VP41KHR5 对比

详细并排对比 MRF6VP21KHR5 出自 NXP Semiconductors 和 MRF6VP41KHR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6VP21KHR5 MRF6VP21KHR5 - 1000W VHV6 RF MOSFET, 235MHz, NI-1230 | NXP

MRF6VP21KHR5 - 1000W VHV6 RF MOSFET, 235MHz, NI-1230 | NXP

MRF6VP21KHR5 ✓ 量产中
NXP Semiconductors
MRF6VP41KHR5 MRF6VP41KHR5 - 1000W 450MHz RF Power MOSFET | NXP

MRF6VP41KHR5 - 1000W 450MHz RF Power MOSFET | NXP

MRF6VP41KHR5 ✓ 量产中

规格对比

参数 MRF6VP21KHR5 MRF6VP41KHR5
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $220.00 $229.50
晶体管类型 N-Channel Enhancement-Mode RF MOSFET (LDMOS) N-Channel Lateral MOSFET
Technology Laterally Diffused MOS (LDMOS) - VHV6 family MOSFET (Metal-Oxide Semiconductor)
Drain-Source Voltage (Vdss) Max 110 V —
Continuous Drain Current [DATA_NEEDED: continuous drain current Id] —
Pulsed Output Power (Pout) at 235 MHz 1000 W (typical, pulsed) —
Operating Frequency Range Up to 235 MHz —
Power Gain (Gps) at 235 MHz 24 dB (nominal, common-source) —
Test Conditions 50 V supply, pulsed RF service —
Drain Efficiency (Typ) [DATA_NEEDED: drain efficiency %] —
Input/Output Matching Unmatched (discrete matching network required) —
封装 / 外壳 NI-1230-4H (5-pin ceramic flange) NI-1230
安装类型 Flange mount with screws to heatsink Chassis Mount (flange)
Maximum Operating Temperature 225 °C (package rating) —
Peak Reflow Temperature 260 °C (max 40 s) 260 C
Operating Mode Enhancement mode —
Channel Polarity N-Channel —
RoHS 状态 [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS compliance status]
MSL 等级 [DATA_NEEDED: MSL rating] —
Manufacturer — NXP Semiconductors
Part Status — Active
Frequency Range — 10 MHz to 500 MHz
Drain-Source Voltage (Vds) — 50 V
Test Frequency — 450 MHz
Output Power (Pout) — 1000 W
Power Gain (Gp) — 20 dB
Drain Current (Id) — 150 mA (operating idle current)
Operating Temperature (Max) — 225 C
Maximum Time at Peak Reflow — 40 s
Configuration — Single

数据手册与资源

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