MRF6VP21KHR5 vs MRF6VP41KHR5 비교
다음의 상세 나란히 비교: MRF6VP21KHR5 제조: NXP Semiconductors 및 MRF6VP41KHR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF6VP21KHR5 | MRF6VP41KHR5 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $220.00 | $229.50 |
| 트랜지스터 유형 | N-Channel Enhancement-Mode RF MOSFET (LDMOS) | N-Channel Lateral MOSFET |
| Technology | Laterally Diffused MOS (LDMOS) - VHV6 family | MOSFET (Metal-Oxide Semiconductor) |
| Drain-Source Voltage (Vdss) Max | 110 V | — |
| Continuous Drain Current | [DATA_NEEDED: continuous drain current Id] | — |
| Pulsed Output Power (Pout) at 235 MHz | 1000 W (typical, pulsed) | — |
| Operating Frequency Range | Up to 235 MHz | — |
| Power Gain (Gps) at 235 MHz | 24 dB (nominal, common-source) | — |
| Test Conditions | 50 V supply, pulsed RF service | — |
| Drain Efficiency (Typ) | [DATA_NEEDED: drain efficiency %] | — |
| Input/Output Matching | Unmatched (discrete matching network required) | — |
| 패키지 / 케이스 | NI-1230-4H (5-pin ceramic flange) | NI-1230 |
| 실장 유형 | Flange mount with screws to heatsink | Chassis Mount (flange) |
| Maximum Operating Temperature | 225 °C (package rating) | — |
| Peak Reflow Temperature | 260 °C (max 40 s) | 260 C |
| Operating Mode | Enhancement mode | — |
| Channel Polarity | N-Channel | — |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS compliance status] |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | — |
| Manufacturer | — | NXP Semiconductors |
| Part Status | — | Active |
| Frequency Range | — | 10 MHz to 500 MHz |
| Drain-Source Voltage (Vds) | — | 50 V |
| Test Frequency | — | 450 MHz |
| Output Power (Pout) | — | 1000 W |
| Power Gain (Gp) | — | 20 dB |
| Drain Current (Id) | — | 150 mA (operating idle current) |
| Operating Temperature (Max) | — | 225 C |
| Maximum Time at Peak Reflow | — | 40 s |
| Configuration | — | Single |