MRF8P20160HSR3 vs MRF8P20161HSR3 Vergleich
Detaillierter Direktvergleich von MRF8P20160HSR3 von NXP Semiconductors und MRF8P20161HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRF8P20160HSR3 | MRF8P20161HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $64,80 | $99,50 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF8P20160HSR3 | — |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral MOSFET (RF Power) |
| Technology | HV8 lateral RF MOSFET | — |
| Frequency Band | 1880 MHz to 2025 MHz | — |
| Output Power (Average) | 37 W (Single-Carrier W-CDMA) | — |
| Drain Supply Voltage (VDD) | 28 Vdc | — |
| Quiescent Drain Current (IDQA) | 550 mA | — |
| Power Gain (Typ) | 16.5 dB at 1.92 GHz | — |
| Test Frequency | 1.92 GHz | 1.92 GHz |
| Gehäuse / Bauform | NI-780S-4 (ceramic flanged) | — |
| Montagestil | Screw-down flange (through-hole) | — |
| Operating Class | Class AB or Class C | Class AB or Class C |
| Junction Temperature (Max) | 200 C (S-prefix sample-tested) | — |
| Application | W-CDMA / LTE / TD-SCDMA base-station PA | CDMA / cellular base station RF power amplifier |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Frequency Range | — | 1880 MHz to 2025 MHz |
| Drain Supply Voltage (Vdd) | — | 28 V |
| Average Output Power | — | 37 W (W-CDMA) |
| Small-Signal Gain | — | 16.4 dB at 1.92 GHz |
| Quiescent Drain Current (Idq) | — | 550 mA |
| Gehäuse | — | NI-780S-4 (NI-780HS-4) ceramic air-cavity, surface mount |
| Montageart | — | Surface mount with screw-down flange |
| Polarity / Channel | — | N-Channel enhancement-mode lateral |
| Modulation Support | — | W-CDMA, LTE, multi-carrier GSM |
| Operating Mode | — | Enhancement mode |