MRF8P20160HSR3 vs MRF8P20161HSR3 비교
다음의 상세 나란히 비교: MRF8P20160HSR3 제조: NXP Semiconductors 및 MRF8P20161HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF8P20160HSR3 | MRF8P20161HSR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $64.80 | $99.50 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF8P20160HSR3 | — |
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral MOSFET (RF Power) |
| Technology | HV8 lateral RF MOSFET | — |
| Frequency Band | 1880 MHz to 2025 MHz | — |
| Output Power (Average) | 37 W (Single-Carrier W-CDMA) | — |
| Drain Supply Voltage (VDD) | 28 Vdc | — |
| Quiescent Drain Current (IDQA) | 550 mA | — |
| Power Gain (Typ) | 16.5 dB at 1.92 GHz | — |
| Test Frequency | 1.92 GHz | 1.92 GHz |
| 패키지 / 케이스 | NI-780S-4 (ceramic flanged) | — |
| 장착 스타일 | Screw-down flange (through-hole) | — |
| Operating Class | Class AB or Class C | Class AB or Class C |
| Junction Temperature (Max) | 200 C (S-prefix sample-tested) | — |
| Application | W-CDMA / LTE / TD-SCDMA base-station PA | CDMA / cellular base station RF power amplifier |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Frequency Range | — | 1880 MHz to 2025 MHz |
| Drain Supply Voltage (Vdd) | — | 28 V |
| Average Output Power | — | 37 W (W-CDMA) |
| Small-Signal Gain | — | 16.4 dB at 1.92 GHz |
| Quiescent Drain Current (Idq) | — | 550 mA |
| 패키지 | — | NI-780S-4 (NI-780HS-4) ceramic air-cavity, surface mount |
| 실장 유형 | — | Surface mount with screw-down flange |
| Polarity / Channel | — | N-Channel enhancement-mode lateral |
| Modulation Support | — | W-CDMA, LTE, multi-carrier GSM |
| Operating Mode | — | Enhancement mode |