MRF8P20160HSR3 vs MRF8P20161HSR3 Comparação

Comparação detalhada lado a lado de MRF8P20160HSR3 por NXP Semiconductors e MRF8P20161HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF8P20160HSR3 MRF8P20160HSR3 - 37W RF Power MOSFET 1880-2025 MHz | NXP

MRF8P20160HSR3 - 37W RF Power MOSFET 1880-2025 MHz | NXP

MRF8P20160HSR3 ✓ Ativo
NXP Semiconductors
MRF8P20161HSR3 MRF8P20161HSR3 - 37W 1880-2025MHz RF Power MOSFET | NXP

MRF8P20161HSR3 - 37W 1880-2025MHz RF Power MOSFET | NXP

MRF8P20161HSR3 ✓ Ativo

Comparação de especificações

Parâmetro MRF8P20160HSR3 MRF8P20161HSR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $64,80 $99,50
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale Semiconductor)
Part Number MRF8P20160HSR3 —
Tipo de transistor N-Channel Enhancement-Mode Lateral MOSFET N-Channel Lateral MOSFET (RF Power)
Technology HV8 lateral RF MOSFET —
Frequency Band 1880 MHz to 2025 MHz —
Output Power (Average) 37 W (Single-Carrier W-CDMA) —
Drain Supply Voltage (VDD) 28 Vdc —
Quiescent Drain Current (IDQA) 550 mA —
Power Gain (Typ) 16.5 dB at 1.92 GHz —
Test Frequency 1.92 GHz 1.92 GHz
Encapsulamento / Caixa NI-780S-4 (ceramic flanged) —
Estilo de montagem Screw-down flange (through-hole) —
Operating Class Class AB or Class C Class AB or Class C
Junction Temperature (Max) 200 C (S-prefix sample-tested) —
Application W-CDMA / LTE / TD-SCDMA base-station PA CDMA / cellular base station RF power amplifier
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
Lead Finish [DATA_NEEDED: lead finish] —
Frequency Range — 1880 MHz to 2025 MHz
Drain Supply Voltage (Vdd) — 28 V
Average Output Power — 37 W (W-CDMA)
Small-Signal Gain — 16.4 dB at 1.92 GHz
Quiescent Drain Current (Idq) — 550 mA
Encapsulamento — NI-780S-4 (NI-780HS-4) ceramic air-cavity, surface mount
Tipo de montagem — Surface mount with screw-down flange
Polarity / Channel — N-Channel enhancement-mode lateral
Modulation Support — W-CDMA, LTE, multi-carrier GSM
Operating Mode — Enhancement mode

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