MRFE6S9046NR1 vs MRFE6S9046GNR1 Vergleich

Detaillierter Direktvergleich von MRFE6S9046NR1 von NXP Semiconductors und MRFE6S9046GNR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRFE6S9046NR1 MRFE6S9046NR1 - 45W RF Power MOSFET 920-960 MHz | NXP

MRFE6S9046NR1 - 45W RF Power MOSFET 920-960 MHz | NXP

MRFE6S9046NR1 ✓ Aktiv
NXP Semiconductors
MRFE6S9046GNR1 MRFE6S9046GNR1 - 35.5W 960MHz 28V RF Power MOSFET | NXP

MRFE6S9046GNR1 - 35.5W 960MHz 28V RF Power MOSFET | NXP

MRFE6S9046GNR1 ✓ Aktiv

Spezifikationsvergleich

Parameter MRFE6S9046NR1 MRFE6S9046GNR1
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $26,40 $18,95
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale)
Part Number MRFE6S9046NR1 MRFE6S9046GNR1
Transistortyp LDMOS, N-Channel Enhancement-Mode Lateral N-Channel Enhancement-Mode Lateral MOSFET
Frequency Range 920 MHz to 960 MHz —
Output Power (CW) 35.5 W typical at 960 MHz, 28 V —
Power Gain 19 dB typical at 960 MHz —
Drain-Source Voltage (Vds max) 66 V rated —
Operating Drain Voltage 28 V nominal —
Test Current (Quiescent) 300 mA —
Gehäuse / Bauform TO-270 WB-4 (CASE 1486-03, Style 1), plastic over-molded ceramic TO-270 WB-4 (Case 1486-03, Style 1), plastic overmold
Pin-Anzahl 5 (Drain, Gate, Source x2, NC) —
Montageart Surface Mount / Flange Mount Surface Mount (Gull-wing leads)
Application GSM / GSM EDGE base station, CDMA, multicarrier amplifier —
Betriebstemperatur [DATA_NEEDED: operating temperature range] —
RoHS-Status Compliant (per DigiKey listing) Compliant (lead-free)
Lead-Free Status Lead Free (per distributor data) —
Technology — HV6E lateral MOSFET
Frequency Band — 920 to 960 MHz
Test Frequency — 960 MHz
Drain Voltage (VDD) — 28 V (typical)
Output Power (Pout, CW) — 35.5 W
Power Gain (Gp) — 19 dB
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Quiescent Drain Current (IDQ) — 300 mA
Input Bias Voltage Range — [DATA_NEEDED: VGS range]
Betriebstemperaturbereich — [DATA_NEEDED: operating temp range]
Storage Temperature Range — [DATA_NEEDED: storage temp range]
Feuchtigkeitsempfindlichkeitsgrad (MSL) — [DATA_NEEDED: MSL rating]
Halogenfrei — [DATA_NEEDED: halogen-free status]

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern