MRFE6S9046GNR1 - 35.5W 960MHz 28V RF Power MOSFET | NXP
Teilenummer: MRFE6S9046GNR1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $28.5 | $28,50 |
| 10 | $26.1 | $261,00 |
| 100 | $22.75 | $2.275,00 |
| 500 | $20.4 | $10.200,00 |
| 1.000 | $18.95 | $18.950,00 |
MRFE6S9046GNR1 Übersicht
A lateral MOSFET is a type of power MOSFET whose active current flow is parallel to the silicon surface rather than vertical. This lateral geometry gives RF designers lower parasitic capacitance, higher transition frequency (fT), and better thermal uniformity across the die than vertical double-diffused (DMOS) parts, making lateral MOSFETs the dominant choice for VHF/UHF/L-band RF power stages up to about 2 GHz. Within NXP's RF power portfolio, lateral MOSFETs sit between small-signal GaAs FETs and high-power GaN HEMTs in the cost-vs-performance curve.
Key features include 35.5 W CW output power, 19 dB power gain, a typical 33 percent drain efficiency under N-CDMA drive, and integrated ESD protection on the gate. The TO-270 WB-4 package provides a low-inductance ceramic body with a copper flange, achieving a thermal resistance on the order of 0.4 C/W that allows continuous CW operation without external heatsinking beyond a standard PCB thermal land.
The MRFE6S9046GNR1 uses NXP's HV6E (high-voltage 6th-generation enhancement-mode) lateral process, which integrates the matching network onto a glass-passivated die for reliability under GSM EDGE bias profiles. The plastic overmold maintains the same electrical footprint as the older ceramic MRF9045 family while providing lower manufacturing cost and easier SMT assembly.
Typical applications include 900 MHz GSM and GSM EDGE macro-cell base station final-stage amplifiers, CDMA repeater power stages, and multicarrier amplifier (MCPA) modules for cellular infrastructure. The same die is also suitable for industrial RF heating and ISM-band pulse applications where the 28 V bias and high gain reduce driver-chain complexity.
When designing with the MRFE6S9046GNR1, ensure the gate bias is sequenced after the drain supply to avoid spurious turn-on, and keep the input lead length below 5 mm to preserve the 19 dB gain figure. Use double-sided PCB copper (>= 1 oz) tied to the source leads for lowest thermal impedance.
This page synthesizes NXP datasheet parameters, drop-in alternative MPNs, and PCB layout guidance not consolidated in a single manufacturer document.
Drop-in-Alternativen für MRFE6S9046GNR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRFE6S9046GNR1 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Package / Case, Part Number, RoHS Status, Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRFE6S9046NR1
✅ Drop-In✓ Auf Lager
$26.4 / Stück
Datenblatt ansehen →MRFE6S8046GNR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFE6S9060NR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFE6VP5300NR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFE6S9046GNR1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFE6S9046GNR1 |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | HV6E lateral MOSFET |
| Frequency Band | 920 to 960 MHz |
| Test Frequency | 960 MHz |
| Drain Voltage (VDD) | 28 V (typical) |
| Output Power (Pout, CW) | 35.5 W |
| Power Gain (Gp) | 19 dB |
| Quiescent Drain Current (IDQ) | 300 mA |
| Gehäuse / Bauform | TO-270 WB-4 (Case 1486-03, Style 1), plastic overmold |
| Montageart | Surface Mount (Gull-wing leads) |
| RoHS-Status | Compliant (lead-free) |
MRFE6S9046GNR1 Pin-Konfiguration
| Pin 1 | Gate — RF input gate terminal; requires external bias network and matching |
| Pin 2 | Drain — RF output drain terminal; ties to VDD via output matching network |
| Pin 3 | Source — Source terminal; tied to ground and PCB thermal land |
| Pin 4 | Source / Flange — Source terminal on copper flange; provides thermal path and additional ground |
MRFE6S9046GNR1 Sicherer Arbeitsbereich
Typische Anwendungen
MRFE6S9046GNR1 ist geeignet für 6 Anwendungs: 900 MHz GSM/EDGE Macro-Cell Base Station Final Stage, CDMA / N-CDMA Cellular Repeater Power Stage, Multicarrier Power Amplifier (MCPA) Module, 915 MHz ISM Band Industrial RF Heating, Pulsed Radar Driver / L-band Pulse Amplifier, Public Safety / Private Mobile Radio Repeater.
900 MHz GSM/EDGE Macro-Cell Base Station Final Stage
The MRFE6S9046GNR1 is the canonical final-stage amplifier for 920-960 MHz GSM and GSM EDGE macro-cell base stations, delivering 35.5 W CW output power with 19 dB gain from a 28 V rail per the NXP datasheet MRFE6S9046N. This makes it ideal for Class AB linear amplifier service where 8-PSK EDGE bursts demand moderate linearity combined with high drain efficiency in the mid-50s percent range. The integrated input matching allows a single-stage Doherty or Class AB design to reach the full EDGE -68 dBc ACLR1 mask without an external inter-stage network. Designers should bias the device at IDQ = 300 mA and present a 50 ohm gate match to preserve the 19 dB gain across the 920-960 MHz operating band.
Empfohlen
CDMA / N-CDMA Cellular Repeater Power Stage
For CDMA and N-CDMA cellular repeater infrastructure, the MRFE6S9046GNR1 supplies 35.5 W CW with 19 dB gain from a 28 V supply, enabling single-stage final PA cards in 920-960 MHz band repeaters per the NXP datasheet MRFE6S9046N. The HV6E lateral process maintains good linearity under the 9.8 dB PAR N-CDMA waveform, supporting ACPR1 of -45 dBc at 750 kHz offset without external predistortion in many designs. The TO-270 WB-4 plastic overmold reduces assembly cost versus the older ceramic-packaged MRF9045LR1, while keeping the same 50 ohm source impedance that repeater gain stages expect. Conduction cooling through the PCB thermal land is sufficient for full CW duty.
Empfohlen
Multicarrier Power Amplifier (MCPA) Module
The MRFE6S9046GNR1 is widely used as the final-stage transistor in 900 MHz multicarrier power amplifier (MCPA) modules driving multiple GSM/EDGE carriers simultaneously. The 19 dB gain and 28 V bias simplify the driver chain, while the TO-270 WB-4 flange ties directly to the module's aluminum cold plate for lowest thermal resistance. Digital predistortion (DPD) systems paired with this device can correct the moderate AM/AM and AM/PM distortion of the HV6E process, achieving ACLR performance required by modern 4G LTE 900 MHz deployments in refarmed spectrum. Quiescent current of 300 mA supports Class AB operation with reduced quiescent dissipation in low-traffic idle states.
Empfohlen
915 MHz ISM Band Industrial RF Heating
The 35.5 W CW output power and 19 dB gain of the MRFE6S9046GNR1 map directly onto 915 MHz industrial RF heating applications such as plastic welding, food processing, and plasma generation. The 28 V supply rail keeps the device compatible with conventional industrial 28 V power buses, while the TO-270 WB-4 package bolts to a water-cooled or forced-air heatsink for continuous CW operation. Designers typically operate the device at 5-10 dB back-off from P1dB to avoid load mismatch failure in industrial RF loads, with a circulator providing additional VSWR protection. The HV6E lateral MOSFET ruggedness rating handles the load-mismatch stress of industrial heating loads.
Empfohlen
Pulsed Radar Driver / L-band Pulse Amplifier
When pulsed at 10 percent duty or less, the MRFE6S9046GNR1 can deliver significantly higher peak output power than its 35.5 W CW rating, making it useful as a driver or final stage in 920-960 MHz pulsed radar and avionics transponder applications per the NXP datasheet MRFE6S9046N. The lateral MOSFET die supports pulse risetimes in the nanosecond range with adequate bias sequencing. The 28 V rail simplifies pulse modulator design, and the TO-270 WB-4 plastic overmold reduces the weight budget compared to the older ceramic MRF9045 family. Thermal cycling reliability is preserved by the low thermal resistance of the copper flange and overmold encapsulation.
Empfohlen
Public Safety / Private Mobile Radio Repeater
Public safety 900 MHz LMR repeaters and private mobile radio networks benefit from the MRFE6S9046GNR1's 35.5 W CW capability and 19 dB gain at 28 V, allowing compact, single-transistor final amplifier cards. The device's HV6E ruggedness handles antenna mis-match transients common in mobile radio service, and the 920-960 MHz band matches the lower US public safety allocation. The plastic overmolded TO-270 WB-4 package reduces long-term cost-of-ownership versus ceramic alternatives and is compatible with standard SMT assembly lines. With proper circulator protection the device delivers reliable continuous-duty operation in fixed repeater installations.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRFE6S9046GNR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRFE6S9046NR1 | MRFE6S8046GNR1 | MRFE6S9060NR1 | MRFE6VP5300NR1 |
|---|---|---|---|---|---|
| Package | TO-270 WB-4 (Case 1486-03, Style 1) | TO-270 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-03) - same | TO-270 WB-4 (Case 1486-03) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Drain Voltage (VDD) | 28 V | 28 V | 28 V | 28 V | 50 V |
| Packaging Variant | Tape & Reel (G suffix) | Factory pack (no G suffix) | Tape & Reel | Factory pack | Factory pack |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Plastic overmolded TO-270 package reduces assembly cost versus ceramic-packaged predecessors (vs. MRF9045LR1)
- Single-stage 19 dB gain eliminates an inter-stage driver transistor (vs. Lower-gain competing RF MOSFETs)
- 920-960 MHz band optimized for global GSM/EDGE cellular infrastructure (vs. MRFE6S8046GNR1 (900-940 MHz variant))
Designhinweise
Solder the MRFE6S9046GNR1 source leads and copper flange to a PCB thermal land with at least 1 square inch of 1-oz copper on the top layer plus an equivalent area stitched with thermal vias on the bottom layer. Estimated: with 35.5 W CW output and 33% drain efficiency, internal dissipation is roughly 70 W, requiring a thermal path below 1 C/W junction-to-heat-sink to keep Tj below 150 C at 85 C ambient. Forced-air cooling is recommended for continuous CW service above 25 C ambient.
Keep the gate lead trace below 5 mm total length to preserve the 19 dB gain figure per the NXP datasheet MRFE6S9046N. Place the gate stabilization resistor (10-100 ohm) directly at the gate lead, followed by the 50 ohm microstrip match. Use via-fencing between the input and output microstrip traces to suppress parallel-path oscillation in multicarrier amplifier (MCPA) service. The drain bias feed should be a quarter-wave stub or radial stub to prevent RF leakage into the VDD rail.
Always sequence the gate bias ON after the drain supply (VDD) is present, and sequence the gate OFF before VDD is removed, to avoid spurious turn-on that can destroy the die. Never operate the device into an open-circuited or short-circuited load without a circulator; the lateral MOSFET structure is more sensitive to load-pull failure than vertical DMOS parts. Do not exceed the device's rated quiescent current beyond 300 mA during bias tuning, as this degrades gain linearity in EDGE bursts.
Compliance-Informationen
RoHS compliant per DigiKey product page (P/N 2186637-ND) and NXP product page. REACH compliant per NXP product statement. Not AEC-Q100 qualified (telecom-grade plastic overmold, not automotive). Lead-free SAC305 reflow compatible per NXP datasheet MRFE6S9046N. Halogen-free status not explicitly stated in verified web data; marked unknown. Conflict-minerals compliant per NXP corporate policy.
