MT40A1G16TD-062E vs H5ANAG6NCMR-XNC Vergleich
Detaillierter Direktvergleich von MT40A1G16TD-062E von Micron Technology und H5ANAG6NCMR-XNC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron
MT40A1G16TD-062E ✓ AktivSpezifikationsvergleich
| Parameter | MT40A1G16TD-062E | H5ANAG6NCMR-XNC |
|---|---|---|
| Marke | Micron Technology | SK hynix |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $18,41 | $31,40 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM (Volatile DRAM) |
| Speichergröße | 16 Gbit | 16 Gb |
| Speicherorganisation | 1G x 16 | — |
| Clock Frequency | 1.6 GHz | — |
| Access Time | 19 ns | — |
| Schnittstelle | POD12 (1.2V pseudo open-drain) | Parallel |
| VDD Supply Voltage | 1.2 V +/- 60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/- 60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV, +250 mV | — |
| Bank Architecture | 8 banks (x16 configuration) | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Refresh | 8192-cycle, 64 ms up to 85C; 32 ms from 85C to 95C | [DATA_NEEDED: refresh rate] |
| Betriebstemperatur | TC maximum up to 95 C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 96-ball FBGA (7.5 x 13 mm) | FBGA-96 |
| Montageart | Surface Mount | Surface Mount |
| Speed Grade | -062E | XN (3200) |
| Product Line Suffix | AAT:F (automotive AEC grade available per Micron catalog) | — |
| Memory Organization | — | 1G x 16 |
| Datenrate | — | 3200 Mbps/pin |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS |
| Power Class | — | Normal Power |
| Product Status | — | Active |
| RoHS-Status | — | RoHS Compliant |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency at 3200] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |