MT40A1G16TD-062E vs H5ANAG6NCMR-XNC 对比

详细并排对比 MT40A1G16TD-062E 出自 Micron Technology 和 H5ANAG6NCMR-XNC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A1G16TD-062E MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E ✓ 量产中
SK hynix
H5ANAG6NCMR-XNC H5ANAG6NCMR-XNC - 16Gb DDR4 SDRAM x16 FBGA-96 | SK Hynix

H5ANAG6NCMR-XNC - 16Gb DDR4 SDRAM x16 FBGA-96 | SK Hynix

H5ANAG6NCMR-XNC ✓ 量产中

规格对比

参数 MT40A1G16TD-062E H5ANAG6NCMR-XNC
品牌 Micron Technology SK hynix
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $18.41 $31.40
存储器类型 DDR4 SDRAM DDR4 SDRAM (Volatile DRAM)
存储容量 16 Gbit 16 Gb
存储组织 1G x 16 —
Clock Frequency 1.6 GHz —
Access Time 19 ns —
接口 POD12 (1.2V pseudo open-drain) Parallel
VDD Supply Voltage 1.2 V +/- 60 mV —
VDDQ Supply Voltage 1.2 V +/- 60 mV —
VPP Supply Voltage 2.5 V, -125 mV, +250 mV —
Bank Architecture 8 banks (x16 configuration) —
VREFDQ On-die, internal, adjustable generation —
Refresh 8192-cycle, 64 ms up to 85C; 32 ms from 85C to 95C [DATA_NEEDED: refresh rate]
工作温度 TC maximum up to 95 C [DATA_NEEDED: operating temperature range]
封装 96-ball FBGA (7.5 x 13 mm) FBGA-96
安装类型 Surface Mount Surface Mount
Speed Grade -062E XN (3200)
Product Line Suffix AAT:F (automotive AEC grade available per Micron catalog) —
Memory Organization — 1G x 16
数据速率 — 3200 Mbps/pin
Supply Voltage (VDD) — 1.2 V
Technology — CMOS
Power Class — Normal Power
Product Status — Active
RoHS 状态 — RoHS Compliant
CAS 延迟 — [DATA_NEEDED: CAS latency at 3200]
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

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