MT58L64L32PT7.5 vs MT58L64L32FT-10 Vergleich
Detaillierter Direktvergleich von MT58L64L32PT7.5 von Micron Technology und MT58L64L32FT-10 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT58L64L32PT7.5 - 2Mbit Sync Burst SRAM 133MHz | Micron
MT58L64L32PT7.5 ✗ AbgekündigtMicron Technology
MT58L64L32FT-10 - 2Mb Sync Burst SRAM 10ns 66MHz | Micron
MT58L64L32FT-10 ✗ AbgekündigtSpezifikationsvergleich
| Parameter | MT58L64L32PT7.5 | MT58L64L32FT-10 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Ende des Lebenszyklus | Ende des Lebenszyklus |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $19,90 | $0,00 |
| Speichertyp | SRAM - Synchronous (SYNCBURST Pipelined) | SRAM - Synchronous Burst (Flow-Through SyncBurst) |
| Speichergröße | 2 Mbit | 2 Mbit |
| Speicherorganisation | 64K x 32 | 64K x 32/36 (also 128K x 18) |
| Clock Frequency | 133 MHz | — |
| Access Time | 4 ns | 10 ns |
| Supply Voltage Range | 3.135 V to 3.6 V | — |
| Schnittstelle | Parallel | Parallel |
| Gehäuse | 100-TQFP (14 x 20.1 mm) | 100-TQFP (14 x 20.1 mm) |
| Montageart | Surface Mount | Surface Mount |
| Lead Pitch | 0.5 mm | — |
| Memory Format | Volatile | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | 0C to +70C (commercial; -10IT variant industrial) |
| I/O Type | LVTTL-compatible 3.3V | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Manufacturer | Micron Technology (also listed under Samsung Semiconductor, Inc. marketplace listing) | — |
| Maximale Taktfrequenz | — | 66 MHz |
| Supply Voltage VDD | — | 3.3 V (+0.3 V/-0.165 V) |
| Output Buffer Supply VDDQ | — | 2.5 V isolated or 3.3 V |
| Write Control | — | Individual BYTE WRITE enables |
| Standby Feature | — | SNOOZE MODE reduced-power standby |
| Data I/O | — | Common data inputs and data outputs |
| Burst Modes | — | Linear and interleaved burst address sequences |