MT58L64L32PT7.5 vs MT58L64L32FT-10 Comparación
Comparación detallada lado a lado de MT58L64L32PT7.5 por Micron Technology y MT58L64L32FT-10 por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT58L64L32PT7.5 - 2Mbit Sync Burst SRAM 133MHz | Micron
MT58L64L32PT7.5 ✗ Fin de vidaMicron Technology
MT58L64L32FT-10 - 2Mb Sync Burst SRAM 10ns 66MHz | Micron
MT58L64L32FT-10 ✗ Fin de vidaComparación de especificaciones
| Parámetro | MT58L64L32PT7.5 | MT58L64L32FT-10 |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Fin de vida | Fin de vida |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $19,90 | $0,00 |
| Tipo de memoria | SRAM - Synchronous (SYNCBURST Pipelined) | SRAM - Synchronous Burst (Flow-Through SyncBurst) |
| Tamaño de memoria | 2 Mbit | 2 Mbit |
| Organización de memoria | 64K x 32 | 64K x 32/36 (also 128K x 18) |
| Clock Frequency | 133 MHz | — |
| Access Time | 4 ns | 10 ns |
| Supply Voltage Range | 3.135 V to 3.6 V | — |
| Interfaz | Parallel | Parallel |
| Encapsulado | 100-TQFP (14 x 20.1 mm) | 100-TQFP (14 x 20.1 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead Pitch | 0.5 mm | — |
| Memory Format | Volatile | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | 0C to +70C (commercial; -10IT variant industrial) |
| I/O Type | LVTTL-compatible 3.3V | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Manufacturer | Micron Technology (also listed under Samsung Semiconductor, Inc. marketplace listing) | — |
| Frecuencia de reloj máxima | — | 66 MHz |
| Supply Voltage VDD | — | 3.3 V (+0.3 V/-0.165 V) |
| Output Buffer Supply VDDQ | — | 2.5 V isolated or 3.3 V |
| Write Control | — | Individual BYTE WRITE enables |
| Standby Feature | — | SNOOZE MODE reduced-power standby |
| Data I/O | — | Common data inputs and data outputs |
| Burst Modes | — | Linear and interleaved burst address sequences |